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Product Detailed Parameters
- Description：JFET P-CH 30V SOT23-3
- Series：SST175
- Mfr：Linear Integrated Systems, Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：P-Channel
- Voltage - Breakdown (V(BR)GSS)：30 V
- Drain to Source Voltage (Vdss)：-
- Current - Drain (Idss) @ Vds (Vgs=0)：-
- Current Drain (Id) - Max：-
- Voltage - Cutoff (VGS off) @ Id：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- Resistance - RDS(On)：125 Ohms
- Power - Max：350 mW
- Operating Temperature：-55°C ~ 135°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-236-3, SC-59, SOT-23-3
- Supplier Device Package：SOT-23-3
- Grade：-
- Qualification：-
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Overview
The SST175 is a single P-channel JFET switch manufactured by Linear Integrated Systems, Inc. in a SOT-23 3L package. It serves as a replacement for the SILICONIX J/SST174 series. Key electrical characteristics include a gate-to-source breakdown voltage of 30V and a maximum continuous power dissipation of 350mW at 25°C. The device operates with a low gate operating current of 0.01µA and exhibits a drain cutoff current ranging from -0.01 to -1mA under specified conditions.
Feature Summary
- Functions as a single P-channel JFET switch designed for low on-resistance applications
- Features extremely low gate operating current to minimize control power consumption
- Provides high input impedance suitable for precision switching circuits
Applications
- Signal routing and multiplexing systems
- Low-power analog switching networks
- Battery-powered instrumentation requiring minimal quiescent current
Procurement Notes
Verify that the specific part number matches the required pinout configuration for the SOT-23 package. Confirm that the voltage ratings align with the system's maximum operational limits. Ensure the manufacturer documentation is current to validate the replacement status for legacy designs. Check for any specific handling requirements associated with the semiconductor material.
Selection Notes
Select this component when a low on-resistance P-channel switch is required with minimal gate drive current. The SOT-23 package offers a compact footprint for space-constrained designs. Consider the junction temperature range and power derating factors for thermal management. Evaluate the saturation current specifications against the load requirements of the target application circuit.
Part Context
This component belongs to the J/SST174 series family of single P-channel JFET switches. It is engineered to replace older discrete solutions while maintaining compatibility with existing board layouts. The series includes variants with different saturation currents and threshold voltages to accommodate various signal levels and load impedances in analog switching applications.
Replacement Considerations
The datasheet explicitly identifies this device as a replacement for the SILICONIX J/SST174 series. Verify pin compatibility and electrical parameter equivalence before substituting into existing designs.
