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SST4119-T1-E3 is listed in the Jfets range at ChipApex. The manufacturer field lists Vishay Siliconix. Its product description is JFET N-CH 40V TO236. Review the specifications below when checking this part for your BOM.
The SST4119-T1-E3 is an N-channel JFET from Vishay Siliconix, designed for high-frequency applications. It features a TO-236 (SC-59) surface-mount package. The device operates with a drain-source breakdown voltage of 60 V and a continuous drain current of 100 mA. Key electrical parameters include a gate-source cutoff voltage of -2 V and a forward transconductance of 3 mS. It supports a maximum power dissipation of 350 mW and functions within a temperature range of -55°C to +150°C.
Verify the specific suffix T1-E3 against official Vishay documentation to confirm lead-free compliance and tape-and-reel packaging specifications. Confirm that the SC-59 footprint matches your PCB design requirements before finalizing procurement orders.
Select this component when low-noise JFET characteristics are required in a small surface-mount form factor. Ensure the operating voltage remains within the 60 V breakdown limit and verify thermal management capabilities for the 350 mW power dissipation rating in your specific application environment.
This part belongs to the Vishay Siliconix discrete semiconductor portfolio, specifically focusing on junction field-effect transistors. The SST series targets applications requiring reliable high-frequency performance with minimal signal distortion in compact electronic designs.
Consult official Vishay cross-reference guides for direct pin-compatible alternatives. Verify that any substitute maintains identical N-channel JFET characteristics, SC-59 packaging, and equivalent electrical ratings for seamless integration.
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