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SST4391 SOT-23 3L ROHS is listed in the Jfets range at ChipApex. The manufacturer field lists Linear Integrated Systems, Inc.. Its product description is JFET N-CH 40V SOT23-3. Review the specifications below when checking this part for your BOM.
The SST4391 is a single N-channel JFET switch in a SOT-23 package. It features low on-resistance of ≤30Ω and fast switching with turn-on time ≤15ns. The device operates with a gate-to-source breakdown voltage of -40V and a maximum continuous power dissipation of 350mW at 25°C. Input capacitance is typically 13pF, while equivalent input noise voltage is 3nV/√Hz.
Verify the specific ordering suffix to confirm compliance with RoHS standards as indicated in the model designation. Ensure the component matches the original Siliconix specifications if used as a direct replacement. Confirm that the SOT-23 package dimensions align with your PCB footprint requirements before finalizing procurement.
Select this component for applications requiring low distortion and high isolation. The SST4391 offers superior performance compared to standard JFETs due to its low on-resistance and fast switching speed. Consider the -40V gate-to-source breakdown voltage when designing control circuits to ensure safe operating margins under all conditions.
Linear Integrated Systems manufactures this discrete semiconductor component. The company specializes in precision analog devices, leveraging expertise from historical industry leaders like Intersil and Union Carbide. This product line focuses on providing reliable replacements for legacy components while maintaining high-quality standards.
This part serves as a replacement for Siliconix 2N4391, PN4391, and SST4391 variants. Verify pinout compatibility and electrical characteristics against the original datasheet to ensure seamless integration into existing designs without modification.
The typical turn-on time is 2ns, with a maximum specified at 15ns.
The primary difference lies in the gate-to-source cutoff voltage (VGS(off)) and recommended load resistance, which affect the optimal operating point for different signal levels.
The maximum continuous power dissipation is 350mW at an ambient temperature of 25°C.
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