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SST4392 SOT-23 3L ROHS is listed in the Jfets range at ChipApex. The manufacturer field lists Linear Integrated Systems, Inc.. Its product description is JFET N-CH 40V SOT23-3. Review the specifications below when checking this part for your BOM.
The SST4392 is a single N-channel JFET switch manufactured by Linear Integrated Systems in an SOT-23 package. It serves as a replacement for Siliconix devices with low on-resistance and fast switching capabilities. Key electrical parameters include a gate-to-source breakdown voltage of -40V, a forward transconductance of 6mS, and a drain-to-source on-resistance ranging from 30 to 100Ω depending on the specific variant. The device operates within a junction temperature range of -55°C to +150°C.
Verify component authenticity through official manufacturer channels or authorized distributors. Confirm that the received parts match the specified Linear Integrated Systems marking and package dimensions. Ensure compliance with relevant environmental standards required for your specific assembly process before integration into final products.
Select this component when a low-on-resistance N-channel JFET switch is required in a compact surface-mount form factor. Consider the specific turn-off voltage requirements (-7V) and current handling capabilities relative to the circuit design. Evaluate thermal derating factors if operating near maximum temperature limits.
Linear Integrated Systems specializes in precision semiconductor components, leveraging expertise from previous industry leaders like Intersil and Union Carbide. The SST4392 belongs to a family of JFET switches designed to replace older discrete technologies while offering improved performance metrics in modern packaging solutions.
This component is documented as a replacement for Siliconix 2N/PN/SST4391, 4292, and 4393 series devices. Verify pinout compatibility and electrical parameter overlaps before substituting in existing designs.
The typical forward transconductance (gfs) is 6mS at VDS = 20V and ID = 1mA.
The maximum gate-to-source breakdown voltage (BVGSS) is -40V.
The maximum junction operating temperature is +150°C.
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