ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：JFET N-CH 30V SOT23
- Series：-
- Mfr：Vishay Siliconix
- Package：Bulk
- FET Type：N-Channel
- Voltage - Breakdown (V(BR)GSS)：30 V
- Drain to Source Voltage (Vdss)：-
- Current - Drain (Idss) @ Vds (Vgs=0)：5 mA @ 15 V
- Current Drain (Id) - Max：-
- Voltage - Cutoff (VGS off) @ Id：3 V @ 1 nA
- Input Capacitance (Ciss) (Max) @ Vds：2.2pF @ 15V
- Resistance - RDS(On)：-
- Power - Max：350 mW
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-236-3, SC-59, SOT-23-3
- Supplier Device Package：SOT-23
- Grade：-
- Qualification：-
Download product information
Overview
The Vishay Siliconix SST4416-E3 is an N-channel JFET designed for high-frequency amplification. It features a Gate-Source Breakdown Voltage of -30 V, a minimum Forward Transconductance of 4.5 mS, and a Saturation Drain Current of 5 mA. The device operates within a temperature range of -55 °C to 150 °C and dissipates up to 350 mW. It utilizes the TO-236 (SOT-23) package.
Feature Summary
- Provides excellent high-frequency gain with very low noise characteristics at 400 MHz
- Delivers high AC/DC switch off-isolation suitable for high-speed switching applications
- Ensures very low distortion for high-quality signal amplification
Applications
- High-frequency amplifier/mixer circuits
- Oscillator designs
- Sample-and-hold systems
- Very low capacitance switches
Procurement Notes
Verify the component matches the specific SST4416-E3 designation rather than the 2N4416 or 2N4416A variants, as packaging and processing differ. Confirm the TO-236 (SOT-23) package type is required for the intended PCB layout. Ensure the application does not exceed the specified absolute maximum ratings for voltage and power dissipation.
Selection Notes
Select this component when low noise and high gain are critical at frequencies around 400 MHz. The SST4416-E3 offers a cost-effective SMT option compared to hermetically sealed military packages. Consider the -30 V breakdown limit and ensure gate-source voltages remain within safe operating areas for reliable performance.
Part Context
This part belongs to the 2N4416 family of N-channel JFETs manufactured by Vishay Siliconix. While electrically similar to the 2N4416, the SST prefix indicates the use of the TO-236 (SOT-23) surface-mount package. This variant provides a lower-cost alternative to the hermetically sealed TO-72 military versions while maintaining comparable electrical specifications for general-purpose high-frequency applications.
Replacement Considerations
The 2N4416 serves as a direct electrical equivalent but typically utilizes different packaging. Verify that any substitute component supports the required SMT footprint and meets the 4.5 mS transconductance minimum.
FAQ
What is the typical power gain at 400 MHz?
The typical power gain (Gps) is 13 dB at 400 MHz.
What is the maximum storage temperature for the SST prefix?
The maximum storage temperature for the SST prefix is 150 °C.
How does the SST4416 differ from the 2N4416 regarding packaging?
The SST4416 uses the TO-236 (SOT-23) surface-mount package, whereas the 2N4416 is available in hermetically sealed TO-206AF (TO-72) or other through-hole options.
