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The SST5462-T1-E3 is a P-Channel Junction Field Effect Transistor (JFET) manufactured by Vishay Siliconix. It features a single channel configuration housed in an SOT-23 (TO-236) surface-mount package. The device supports a gate-source breakdown voltage of 40 V and operates within a temperature range of -55°C to +150°C. Key electrical specifications include a maximum power dissipation of 350 mW, a minimum forward transconductance of 2 mS, and a continuous drain current capacity of 4 mA.
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Select this component for designs requiring P-Channel JFET characteristics with low leakage current. Consider the 40 V breakdown limit and 4 mA current rating when sizing circuit components. Evaluate thermal management requirements given the 350 mW power dissipation limit in the small SOT-23 package. Compare against alternative JFETs if higher current or different polarity is needed.
This part belongs to the Vishay Siliconix JFET family, specifically designed for analog switching and amplification tasks. The SST5462 variant provides a robust solution for high-impedance inputs. Its P-Channel configuration allows for specific biasing arrangements distinct from N-Channel devices. The SOT-23 form factor enables automated pick-and-place manufacturing processes.
Public confirmed substitute part numbers are not available in the provided documentation. Consult official cross-reference guides for potential alternatives.