SST5462-T1-E3

SST5462-T1-E3

$0.29
  • Description:JFET P-CH 40V SOT23
  • Series:-

SKU:ca24063413a4 Category: Brand:

  
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Product Detailed Parameters

  • Description:JFET P-CH 40V SOT23
  • Series:-
  • Mfr:Vishay Siliconix
  • Package:Tape & Reel (TR)
  • FET Type:P-Channel
  • Voltage - Breakdown (V(BR)GSS):40 V
  • Drain to Source Voltage (Vdss):-
  • Current - Drain (Idss) @ Vds (Vgs=0):4 mA @ 15 V
  • Current Drain (Id) - Max:-
  • Voltage - Cutoff (VGS off) @ Id:1.8 V @ 1 µA
  • Input Capacitance (Ciss) (Max) @ Vds:7pF @ 15V
  • Resistance - RDS(On):-
  • Power - Max:350 mW
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package:SOT-23
  • Grade:-
  • Qualification:-

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SST5462-T1-E3

Overview

The SST5462-T1-E3 is a P-Channel Junction Field Effect Transistor (JFET) manufactured by Vishay Siliconix. It features a single channel configuration housed in an SOT-23 (TO-236) surface-mount package. The device supports a gate-source breakdown voltage of 40 V and operates within a temperature range of -55°C to +150°C. Key electrical specifications include a maximum power dissipation of 350 mW, a minimum forward transconductance of 2 mS, and a continuous drain current capacity of 4 mA.

Feature Summary

  • P-Channel JFET technology for signal switching applications
  • Surface-mount SOT-23 packaging for compact board integration
  • High operating junction temperature capability up to 150°C

Applications

  • Analog signal switching circuits
  • Low-level audio signal routing
  • Instrumentation input stages

Procurement Notes

Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm RoHS compliance status via official datasheets. Check end-of-life notifications as availability may be restricted. Ensure storage conditions meet semiconductor handling standards to prevent moisture sensitivity damage prior to assembly.

Selection Notes

Select this component for designs requiring P-Channel JFET characteristics with low leakage current. Consider the 40 V breakdown limit and 4 mA current rating when sizing circuit components. Evaluate thermal management requirements given the 350 mW power dissipation limit in the small SOT-23 package. Compare against alternative JFETs if higher current or different polarity is needed.

Part Context

This part belongs to the Vishay Siliconix JFET family, specifically designed for analog switching and amplification tasks. The SST5462 variant provides a robust solution for high-impedance inputs. Its P-Channel configuration allows for specific biasing arrangements distinct from N-Channel devices. The SOT-23 form factor enables automated pick-and-place manufacturing processes.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation. Consult official cross-reference guides for potential alternatives.

SST5462-T1-E3SST5462-T1-E3
$0.29
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