ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：JFET N-CH 25V SOT23
- Series：-
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Voltage - Breakdown (V(BR)GSS)：25 V
- Drain to Source Voltage (Vdss)：-
- Current - Drain (Idss) @ Vds (Vgs=0)：4 mA @ 15 V
- Current Drain (Id) - Max：-
- Voltage - Cutoff (VGS off) @ Id：500 mV @ 10 nA
- Input Capacitance (Ciss) (Max) @ Vds：5pF @ 15V
- Resistance - RDS(On)：-
- Power - Max：350 mW
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-236-3, SC-59, SOT-23-3
- Supplier Device Package：SOT-23
- Grade：-
- Qualification：-
Download product information
Overview
The SST5485-E3 is an RF small signal field-effect transistor manufactured by Vishay Siliconix. It is a single-element, N-channel junction FET constructed from silicon and housed in a TO-236 surface-mount package with three pins. The device operates in depletion mode and is designed for ultra-high frequency band applications. Key electrical characteristics include a minimum drain-source breakdown voltage of 25 V and a maximum feedback capacitance (Crss) of 5 pF. The component supports a maximum operating temperature of 150 °C and utilizes a plastic/epoxy encapsulation body with gull-wing terminals.
Feature Summary
- Designed for RF small signal amplification in ultra-high frequency bands
- Utilizes N-channel junction FET technology for depletion mode operation
- Features low feedback capacitance suitable for high-frequency performance
Applications
- RF amplifier circuits
- Ultra-high frequency signal processing
- Small signal amplification stages
Procurement Notes
Verify the manufacturer designation as Vishay Siliconix or Vishay Semiconductors, as historical data links this part to Temic and Vishay. Confirm the E3 suffix indicates lead-free compliance per JESD-609 standards. Ensure the package matches the TO-236 (SOT-23) form factor and that the device is specified for depletion mode operation rather than enhancement mode.
Selection Notes
Select this component when designing circuits requiring an N-channel JFET for RF applications. The TO-236 package is appropriate for surface-mount assembly. Consider the 25 V breakdown voltage limit and 5 pF feedback capacitance when matching impedance and ensuring stability in high-frequency environments. Verify thermal limits against the 150 °C maximum operating temperature specification.
Part Context
The SST5485 belongs to the family of RF small signal field-effect transistors. It is functionally similar to the SST5485TT2 variant, which shares the same core specifications but may differ in packaging tape-and-reel configurations. Both devices serve as silicon-based N-channel junction FETs intended for ultra-high frequency applications within the same product line.
Replacement Considerations
The SST5485TT2 is a confirmed substitute part number sharing identical electrical characteristics and package type. Verify pinout compatibility and ensure the replacement meets the specific depletion mode requirements of the original design.
