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The SST5485-T1-E3 is an RF small signal field-effect transistor manufactured by Vishay Siliconix. It is a single-element, N-channel silicon Junction FET housed in a TO-236 (SOT-23) surface-mount package. The device operates in depletion mode and is designed for amplifier applications. Key electrical characteristics include a minimum drain-source breakdown voltage of 25 V and a maximum feedback capacitance (Crss) of 5 pF.
Verify the manufacturer origin carefully, as the base model SST5485 was historically produced by TEMIC. Confirm that the specific SST5485-T1-E3 variant matches the required Vishay Siliconix specifications and package details. Ensure the component meets current RoHS compliance standards indicated by the E3 suffix before integration into designs.
Select this component for low-noise RF amplification tasks requiring depletion mode operation. The TO-236 package offers compact surface-mount integration. Verify that the 25 V breakdown voltage and 5 pF capacitance align with the target circuit's frequency and power requirements.
This component belongs to the family of RF small signal JFETs. While the SST5485 designation originated from TEMIC, the SST5485-T1-E3 represents the Vishay Siliconix version. It serves as a discrete semiconductor solution for analog radio frequency stages, distinct from MOSFETs or power switches found in other Vishay portfolios.