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The SSVBC846BPDW1T1G is a dual general-purpose NPN transistor from onsemi, housed in a compact SOT-363 (SC-88) surface-mount package. It features a maximum collector current of 100 mA and a collector-emitter voltage rating of 65 V. The device offers a minimum DC current gain (hFE) of 200 and a transition frequency of 100 MHz. Power dissipation is rated at 380 mW. It operates within a temperature range of -55°C to +150°C. This component is designed for low-power applications requiring high-density mounting.
Verify the specific suffix 'SSV' against official onsemi documentation to confirm exact electrical tolerances and binning, as this prefix may denote specialized automotive or high-reliability variants. Ensure the ordering part number matches the required AEC-Q101 qualification status and PPAP capability if used in automotive contexts. Confirm package dimensions and pinout compatibility during integration.
Select this component when a dual NPN transistor is required in a minimal footprint SOT-363 package. It serves as an alternative to single transistors where board space is constrained. Consider its 100 mA current limit and 65 V voltage rating for appropriate circuit design. Verify that the hFE range meets the specific gain requirements of the application compared to standard BC846BDW1T1G variants.
This part belongs to the BC846B series of dual general-purpose transistors. It shares the core silicon structure with other SOT-363 devices but carries the 'SSV' prefix, which typically indicates specific automotive quality controls or testing criteria defined by onsemi. It complements single-transistor options like the BC846BLT1G by providing two matched units in one package.
Direct substitutes include the BC846BDW1T1G and SBC846BDW1T1G, though these may lack the specific 'SSV' automotive qualification. The BC846BPDW1T1G is a functional equivalent in the same package but may differ in specific gain bins or reliability certifications.