ST50V10200

Overview

The ST50V10200 is a common-source N-channel enhancement-mode lateral field-effect RF power transistor manufactured by STMicroelectronics. Designed for broadband applications, this LDMOS device operates effectively from high frequency up to 1.5 GHz. It delivers significant output power capabilities, with specifications indicating ratings around 200 W to 225 W at 50 V drain voltage. The component provides substantial gain, documented at approximately 17.5 dB to 18 dB, ensuring efficient signal amplification. It features integrated ESD protection and supports a large positive and negative gate/source voltage range, facilitating robust performance in commercial, avionics, and industrial environments.

Feature Summary

• High efficiency and linear gain operations
• Integrated ESD protection
• Large positive and negative gate/source voltage range

Applications

• Broadband commercial RF systems
• Avionics communication equipment
• Industrial RF amplifiers

Procurement Notes

Verify the current lifecycle status before procurement, as the ST50V10200 is listed as obsolete in some distributor records. Confirm datasheet revisions and specific electrical test conditions, as parameters like breakdown voltage and operating frequency may vary slightly between sources. Ensure compatibility with existing thermal management solutions due to the high power dissipation characteristics of LDMOS transistors. Cross-reference part numbers carefully to avoid confusion with similar series components.

Selection Notes

Select the ST50V10200 for designs requiring high-power RF amplification in the HF to 1.5 GHz range. Its LDMOS technology offers a balance of linearity and efficiency suitable for demanding broadband applications. Consider the 50 V operating voltage and associated thermal requirements when designing the power supply and heat sink infrastructure. The integrated ESD protection simplifies handling and system integration, reducing the need for external protective circuitry in sensitive RF paths.

Part Context

This component belongs to the family of RF MOSFET transistors produced by STMicroelectronics. It utilizes Silicon (Si) technology and is packaged for surface-mount or specialized RF mounting, often identified by codes such as M246. As an LDMOS device, it is distinct from standard logic MOSFETs, optimized specifically for radio frequency power amplification rather than switching applications.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation. Due to the obsolete lifecycle status indicated in some sources, direct replacements may require consulting official STMicroelectronics support channels or evaluating newer generation LDMOS devices with compatible pinouts and electrical specifications.