STAC2933

Overview

The STAC2933 is a gold-metallized N-channel MOS field-effect RF power transistor manufactured by STMicroelectronics. Designed for large-signal applications, it operates with a rated voltage of 130 V and supports frequencies up to 150 MHz. The device delivers an output power of 400 W with a gain of 23.5 dB at 30 MHz. It utilizes Silicon technology and is housed in a package weighing approximately 400 mg.

Feature Summary

• Gold-metallized construction for enhanced reliability
• N-channel MOS field-effect architecture
• Optimized for large-signal RF operation

Applications

• Large-signal RF amplifier circuits
• Broadband communication systems
• ISM band applications

Procurement Notes

Verify the specific datasheet version when sourcing, as documentation may reference varying parameters such as 300W or 400W output power. Confirm that the component matches the STAC series designation from STMicroelectronics. Ensure compatibility with high-voltage biasing requirements specified in the official technical literature before integration.

Selection Notes

Select this component for designs requiring high-power RF performance at frequencies up to 150 MHz. The 130V rating suits high-voltage supply rails. Consider the 400W output capability for demanding transmitter stages. Verify thermal management needs due to significant power dissipation in large-signal modes.

Part Context

This part belongs to the STAC series of RF power transistors from STMicroelectronics. These devices are engineered for robust performance in radio frequency environments. The series typically features gold-metallized gates to ensure stability and longevity in high-frequency switching applications.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation.