STAC4933

Overview

The STAC4933 is an N-channel RF power MOSFET manufactured by STMicroelectronics, designed for high-power radio frequency applications. It operates at a center frequency of 30 MHz with a gain of 24 dB and delivers 300 W of output power. The device features a drain-source breakdown voltage (Vds) of 200 V and a continuous drain current (Id) of 40 A. It utilizes the STAC177B surface-mount package and supports a maximum junction temperature of +150 °C. The component is constructed using silicon technology and includes moisture-resistant properties suitable for demanding environments.

Feature Summary

• High-power RF performance with 300 W output capability
• N-channel DMOS construction for robust operation
• Surface-mount STAC177B package design
• Moisture resistant structure

Applications

• RF power amplification stages
• Broadcast transmitter systems
• Industrial heating and plasma generation

Procurement Notes

Verify the specific ordering suffix to ensure correct packaging configuration, as bulk and tray options may exist within the product family. Confirm RoHS compliance status through official manufacturer documentation prior to integration. Ensure thermal management solutions align with the specified maximum operating temperature limits. Cross-reference the pinout diagram against the target PCB layout to guarantee proper electrical connectivity. Validate that the selected variant matches the required frequency and power specifications for the intended application.

Selection Notes

Select this component when designing circuits requiring 300 W output at 30 MHz. Consider the 200 V drain-source voltage rating for system headroom. Evaluate the STAC177B package dimensions for mechanical fitment. Assess thermal resistance requirements based on the 648 W power dissipation capability. Compare gain characteristics against alternative devices for efficiency optimization in RF amplifier topologies.

Part Context

The STAC4933 belongs to STMicroelectronics' discrete RF MOSFET portfolio, targeting high-efficiency power amplification. It complements other devices in the series by offering specific frequency and power combinations. The component serves as a critical active element in linear and switching RF power stages, providing reliable performance in industrial and broadcast infrastructure applications.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation.