SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The START499D is an NPN radio frequency bipolar junction transistor manufactured by STMicroelectronics. It is housed in a surface-mount SOT-89 package, also identified as TO-243AA. The device features a maximum collector-emitter breakdown voltage of 4.5V and supports a continuous collector current of up to 1A. It delivers a power gain ranging from 13dB to 14dB and has a maximum power dissipation rating of 1.7W. The DC current gain (hFE) is specified at a minimum of 150 when tested at 160mA and 3V. The component operates within a junction temperature range up to 150°C and complies with RoHS3 standards.
Verify the obsolete status of this component before integration into new designs. Confirm that the SOT-89 footprint matches the target PCB layout. Ensure compatibility with existing supply chains given the discontinuation date. Check for alternative sources if long-term availability is required for production runs.
Select this part for low-voltage RF applications where a 4.5V breakdown limit is sufficient. The SOT-89 package offers a balance between thermal performance and board space efficiency. Consider the 1A current rating when designing load circuits. Verify that the 13-14dB gain meets the system requirements without additional amplification stages.
This component belongs to the START499 family of bipolar transistors. It shares core specifications with related variants but differs in packaging and specific ordering suffixes. The device utilizes high voltage multi-epitaxial planar technology to achieve its switching characteristics and voltage capabilities.
Public confirmed substitute part numbers are not available in the provided documentation.