STB10LN80K5

Single FETs, MOSFETs Overview

The STB10LN80K5 is an N-channel Power MOSFET from the MDmesh K5 series, manufactured by STMicroelectronics. It features a drain-source voltage (Vdss) of 800 V and a continuous drain current (Id) of 8 A at case temperature (Tc). The typical on-resistance (Rds(on)) is 0.59 Ω, with a maximum of 630 mΩ at 4 A and 10 V gate drive. The device utilizes a TO-263 (D2PAK) surface-mount package. Key electrical parameters include a maximum gate-source voltage (Vgs) of ±30 V, a maximum gate charge (Qg) of 15 nC at 10 V, and a maximum input capacitance (Ciss) of 427 pF at 100 V. It operates within a junction temperature range of -55°C to 150°C.

Single FETs, MOSFETs Feature Summary

• MDmesh K5 technology provides industry-leading low on-resistance and ultra-low gate charge for high efficiency.
• Integrated Zener protection between gate and source enhances robustness against static discharge.
• 100% avalanche tested to ensure reliability under inductive switching loads.

Single FETs, MOSFETs Applications

• High-voltage switching applications requiring superior power density
• General-purpose power conversion circuits
• Industrial motor control systems

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix and packaging configuration when sourcing, as tape-and-reel quantities may vary by distributor. Confirm RoHS compliance status and moisture sensitivity level (MSL 1) requirements for your assembly process. Cross-reference the manufacturer part number with authorized distributors to ensure authenticity and traceability. Check for any recent product change notices regarding packaging or manufacturing location updates.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring 800 V breakdown voltage with moderate current handling capabilities. The TO-263 package offers a balance between thermal performance and PCB space efficiency compared to through-hole alternatives. Consider the 630 mΩ maximum Rds(on) for conduction loss calculations at 4 A. Ensure the gate drive circuit can supply sufficient current to manage the 15 nC gate charge effectively during switching transitions.

Single FETs, MOSFETs Part Context

This device belongs to the MDmesh K5 family of very high voltage N-channel Power MOSFETs. The series leverages an innovative proprietary vertical structure to achieve dramatic reductions in on-resistance and gate charge. This technology enables superior power density and high efficiency in applications demanding robust performance at high voltages.

Single FETs, MOSFETs Replacement Considerations

Direct substitutes within the same MDmesh K5 family include STL10LN80K5 (PowerFlat package) and STFU10N80K5 (TO-220FP package), which share similar electrical characteristics but differ in physical footprint and thermal management requirements. Verify pinout compatibility and thermal resistance values before substitution.