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STB120N10F4 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists STMicroelectronics. Its product description is MOSFET N-CH 100V D2PAK. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for STB120N10F4
- Description：MOSFET N-CH 100V D2PAK
- Series：-
- Mfr：STMicroelectronics
- Package：Tape & Reel (TR)
- FET Type：-
- Technology：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：120A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：-
- FET Feature：-
- Power Dissipation (Max)：300W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：TO-263 (D2PAK)
- Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Single FETs, MOSFETs datasheet and documents for STB120N10F4
Single FETs, MOSFETs Overview
The STB120N10F4 is an N-channel Power MOSFET from the STripFET F4 series, designed for high-efficiency switching applications. It features a 100V drain-source voltage rating and a continuous drain current of 120A at 25°C. The device exhibits a typical on-resistance (Rds(on)) of 8mΩ, contributing to low conduction losses. Packaged in a D2PAK case, it integrates DeepGATE technology to optimize gate charge and switching performance.
Single FETs, MOSFETs Feature Summary
- STripFET F4 technology reduces on-resistance and gate charge for improved efficiency
- DeepGATE structure optimizes switching speed and thermal performance
- Low internal inductance design enhances dynamic performance
Single FETs, MOSFETs Applications
- DC-DC converters
- Motor control circuits
- High-current power supplies
Single FETs, MOSFETs Procurement Notes
Verify the component marking '120N10F4' on the package surface to confirm authenticity. Ensure the D2PAK package matches the specified footprint. Cross-reference the datasheet revision date with your procurement documentation to ensure compliance with current manufacturing standards.
Single FETs, MOSFETs Selection Notes
Select this component when a 100V rating and 120A current capacity are required in a D2PAK package. Consider the 8mΩ Rds(on) for thermal management calculations. Compare gate charge specifications against alternative MOSFETs if switching frequency optimization is critical for the specific application design.
Single FETs, MOSFETs Part Context
This part belongs to STMicroelectronics' STripFET F4 family, which utilizes advanced trench gate technology. The F4 generation offers lower figure-of-merit compared to previous iterations, providing better performance in high-frequency power conversion environments while maintaining robust avalanche capabilities.
Single FETs, MOSFETs Replacement Considerations
The IXTQ130N10T is a documented comparable alternative. Verify pinout compatibility and thermal resistance values before substitution. Ensure the replacement meets the same 100V and current requirements.
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