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STB155N3LH6 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists STMicroelectronics. Its product description is MOSFET N-CH 30V 80A D2PAK. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for STB155N3LH6
- Description：MOSFET N-CH 30V 80A D2PAK
- Series：DeepGATE™, STripFET™ VI
- Mfr：STMicroelectronics
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：80A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：5V, 10V
- Rds On (Max) @ Id, Vgs：3mOhm @ 40A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：80 nC @ 5 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：3800 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：110W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：TO-263 (D2PAK)
- Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Single FETs, MOSFETs datasheet and documents for STB155N3LH6
Single FETs, MOSFETs Overview
The STB155N3LH6 is an N-channel Power MOSFET manufactured by STMicroelectronics, utilizing STripFET H6 technology. It features a 30 V drain-source voltage (Vdss) and a continuous drain current (Id) of 80 A at case temperature. The device exhibits a maximum on-resistance (Rds(on)) of 3 mΩ at 10 V gate drive. Key electrical parameters include a gate charge (Qg) of 62 nC and an input capacitance (Ciss) of 3650 pF. It operates within a junction temperature range of -55°C to +175°C and is housed in a DPAK (TO-252-3) surface-mount package.
Single FETs, MOSFETs Feature Summary
- STripFET H6 technology provides very low on-resistance and gate charge for efficient switching.
- AEC-Q101 qualified for automotive reliability standards.
- High avalanche ruggedness ensures robust performance under transient conditions.
- Logic level gate drive capability allows direct interfacing with standard control circuits.
Single FETs, MOSFETs Applications
- Automotive power distribution systems
- DC-DC converter modules
- Motor control applications
Single FETs, MOSFETs Procurement Notes
Verify the specific suffix 'B' against official STMicroelectronics documentation to confirm pinout or thermal characteristics distinct from the standard 'STD' series. Confirm current availability status as some variants may be subject to end-of-life notices. Ensure the selected package matches the required PCB footprint for TO-252-3 mounting.
Single FETs, MOSFETs Selection Notes
Select this component when a 30 V rating and high current handling are required in a compact surface-mount form factor. The low Rds(on) minimizes conduction losses, while the logic-level gate drive simplifies driver design. Consider the thermal resistance of the DPAK package for heat dissipation requirements in the target application environment.
Single FETs, MOSFETs Part Context
This part belongs to the STB155N3LH6 series of N-channel Power MOSFETs. It is part of STMicroelectronics' broader portfolio of automotive-grade discrete semiconductors designed for high-efficiency power management. The STripFET H6 generation represents an advancement in trench gate technology for lower loss applications.
Single FETs, MOSFETs Replacement Considerations
Cross-reference with STD155N3H6 for potential functional equivalence, provided the package and electrical specifications align with the design requirements. Verify pin compatibility and thermal performance before substitution.
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