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STB20N65M5 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists STMicroelectronics. Its product description is MOSFET N-CH 650V 18A D2PAK. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for STB20N65M5
- Description：MOSFET N-CH 650V 18A D2PAK
- Series：MDmesh™ V
- Mfr：STMicroelectronics
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：650 V
- Current - Continuous Drain (Id) @ 25°C：18A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：190mOhm @ 9A, 10V
- Vgs(th) (Max) @ Id：5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：36 nC @ 10 V
- Vgs (Max)：±25V
- Input Capacitance (Ciss) (Max) @ Vds：1434 pF @ 100 V
- FET Feature：-
- Power Dissipation (Max)：130W (Tc)
- Operating Temperature：150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：TO-263 (D2PAK)
- Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Single FETs, MOSFETs datasheet and documents for STB20N65M5
Single FETs, MOSFETs Overview
The STB20N65M5 is an N-channel enhancement-mode Power MOSFET from the MDmesh M5 series. It features a maximum drain-source voltage of 650 V and a continuous drain current of 17 A. The device exhibits a typical on-resistance of 175 mΩ at 25°C. It operates within a temperature range of -55°C to +150°C and is housed in a D2PAK (TO-263) surface-mount package.
Single FETs, MOSFETs Feature Summary
- Utilizes innovative vertical process technology combined with horizontal layout for extremely low on-resistance
- Offers higher breakdown voltage rating and high dv/dt capability
- Provides excellent switching performance with low gate charge
- Subjected to 100% avalanche testing for reliability
Single FETs, MOSFETs Applications
- High-power power factor correction circuits
- Pulse width modulation topologies
- Hard switching applications requiring superior efficiency
Single FETs, MOSFETs Procurement Notes
Verify the specific suffix against official datasheets, as variations may indicate different thermal or packaging specifications. Confirm RoHS compliance status through manufacturer documentation. Ensure the component matches the required D2PAK footprint and pinout configuration for your design.
Single FETs, MOSFETs Selection Notes
Select this component for designs prioritizing high power density and efficiency in hard switching environments. The MDmesh M5 technology provides a favorable balance between conduction losses and switching speed. Evaluate thermal management requirements given the TO-263 package constraints for the specified current ratings.
Single FETs, MOSFETs Part Context
This part belongs to the MDmesh M5 family of super-junction high-voltage MOSFETs. These devices are engineered for high-power conversion applications where minimizing energy loss is critical. The series represents an evolution in silicon-based power switching technology optimized for modern electronic systems.
Single FETs, MOSFETs Replacement Considerations
Compatible alternatives include STF20N65M5 and STL21N65M5. Verify that substitute parts match the 650V rating, 17A current capacity, and D2PAK package dimensions before integration.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
