STB45N65M5

Single FETs, MOSFETs Overview

STB45N65M5 is an N-channel Power MOSFET from the MDmesh M5 series, utilizing innovative vertical process technology combined with PowerMESH horizontal layout. It features a maximum drain-source voltage of 650 V and a continuous drain current of 35 A. The device offers an extremely low typical on-resistance of 67 mΩ. Packaged in a D2PAK (TO-263) surface-mount housing, it supports a maximum power dissipation of 190 W at case temperature. Key electrical parameters include a gate charge of 100 nC at 10 V and a threshold voltage of 5 V at 250 µA.

Single FETs, MOSFETs Feature Summary

• Extremely low on-resistance achieved through MDmesh M5 vertical process and PowerMESH horizontal layout
• Higher dv/dt capability for improved switching performance
• High breakdown voltage rating suitable for demanding power applications
• 100% avalanche tested for enhanced ruggedness

Single FETs, MOSFETs Applications

• Hard switching PWM topologies
• High-power PFC circuits
• General-purpose power conversion requiring superior efficiency

Single FETs, MOSFETs Procurement Notes

Verify the specific package variant against the datasheet to ensure compatibility with PCB footprint requirements. Confirm that the thermal management design accommodates the specified power dissipation limits under actual operating conditions. Check for any recent product change notices regarding manufacturing site or material composition updates.

Single FETs, MOSFETs Selection Notes

Select this component when high voltage isolation and low conduction losses are critical. The D2PAK package provides a balance between thermal performance and space constraints compared to through-hole options. Ensure the driving circuit can supply sufficient gate charge to maintain optimal switching speeds without excessive loss.

Single FETs, MOSFETs Part Context

The STB45N65M5 belongs to the MDmesh M5 family, which integrates advanced super-junction technology. This series is designed to replace older generation MOSFETs by offering lower Rds(on) and better switching characteristics within similar package footprints, enhancing overall system efficiency.

Single FETs, MOSFETs Replacement Considerations

Direct pin-compatible alternatives within the same series include STF45N65M5 (TO-220) and STW45N65M5 (TO-247). Verify thermal resistance differences if changing packages. Cross-reference with MDmesh M6 or M9 series for potential performance upgrades in newer designs.