STB47N60DM6AG

Single FETs, MOSFETs Overview

STB47N60DM6AG is an automotive-grade N-channel Power MOSFET from the MDmesh DM6 series, housed in a D²PAK package. It features a 600 V drain-source breakdown voltage and a maximum on-resistance of 80 mΩ at VGS = 10 V. The device supports a continuous drain current of 36 A at 25 °C case temperature and handles pulsed currents up to 137 A. Key electrical parameters include a total gate charge of 55 nC, input capacitance of 2350 pF, and reverse recovery time of 115 ns for the body diode. Thermal resistance from junction to case is 0.5 °C/W.

Single FETs, MOSFETs Feature Summary

• AEC-Q101 qualified for automotive reliability
• Fast-recovery body diode with low reverse recovery charge
• Extremely high dv/dt ruggedness rated at 100 V/ns
• Integrated Zener protection between gate and source

Single FETs, MOSFETs Applications

• High-efficiency bridge topologies
• ZVS phase-shift converters
• Automotive switching applications

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering code STB47N60DM6AG against the manufacturer's official datasheet DS12070 Rev 5 to confirm package type and electrical ratings. Ensure compatibility with automotive grade requirements by checking for AEC-Q101 certification status. Confirm thermal management solutions align with the specified junction-to-case thermal resistance values provided in the documentation.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring robust performance in high-voltage switching environments. The MDmesh DM6 technology offers improved RDS(on) per area compared to previous generations. Consider the D²PAK package for surface-mount assembly needs. Evaluate the 100 V/ns dv/dt capability for systems exposed to significant voltage transients or noise.

Single FETs, MOSFETs Part Context

The STB47N60DM6AG belongs to the MDmesh DM6 super-junction power MOSFET family produced by STMicroelectronics. This series is optimized for fast-recovery diode applications and full-bridge phase-shifted ZVS topologies. It represents an advancement in silicon carbide-free high-voltage switching technology, focusing on efficiency and ruggedness for demanding power conversion scenarios.

Single FETs, MOSFETs Replacement Considerations

Check for direct substitutes within the MDmesh DM6 series such as STW52N60DM6 or STWA67N60DM6 if pinout compatibility allows. Verify that alternative packages like TO-247 meet the spatial constraints of the original D²PAK design.