STB6NK60Z-1

$0.45

Description：MOSFET N-CH 600V 6A I2PAK
Series：SuperMESH™
Mfr：STMicroelectronics
Package：Tube

SKU:aa29d2171856 Category: Single FETs, MOSFETs Brand: STMicroelectronics

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Product introduction

STB6NK60Z-1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists STMicroelectronics. Its product description is MOSFET N-CH 600V 6A I2PAK. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for STB6NK60Z-1

Description：MOSFET N-CH 600V 6A I2PAK
Series：SuperMESH™
Mfr：STMicroelectronics
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：600 V
Current - Continuous Drain (Id) @ 25°C：6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：1.2Ohm @ 3A, 10V
Vgs(th) (Max) @ Id：4.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs：46 nC @ 10 V
Vgs (Max)：±30V
Input Capacitance (Ciss) (Max) @ Vds：905 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：110W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：I2PAK
Package / Case：TO-262-3 Long Leads, I2PAK, TO-262AA

Single FETs, MOSFETs datasheet and documents for STB6NK60Z-1

STB6NK60Z-1

Single FETs, MOSFETs Overview

STB6NK60Z-1 is an N-channel 600 V, 6 A SuperMESH Power MOSFET in an I²PAK package. It features a typical on-resistance of 1 Ω and is designed for high dv/dt capability with minimized gate charge. The device is 100% avalanche tested.

Single FETs, MOSFETs Feature Summary

Extremely high dv/dt capability
Gate charge minimized
100% avalanche tested

Single FETs, MOSFETs Applications

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix '-1' against the manufacturer's official datasheet to confirm exact electrical tolerances and package variations. Ensure compatibility with existing thermal management designs, as the I²PAK package requires appropriate mounting considerations for optimal heat dissipation during operation.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring robust high-voltage switching with optimized dynamic performance. The SuperMESH technology provides a balance of low conduction losses and high dv/dt immunity, suitable for demanding power conversion environments where reliability under fast switching transients is critical.

Single FETs, MOSFETs Part Context

This part belongs to STMicroelectronics' SuperMESH series, which optimizes the strip-based PowerMESH layout. This series complements the company's broader range of high-voltage MOSFETs, including MDmesh products, focusing on reducing on-resistance while maintaining excellent dv/dt characteristics.

Single FETs, MOSFETs Replacement Considerations

Consult official substitution guides for equivalent N-channel 600 V MOSFETs in I²PAK packages. Verify pinout compatibility and thermal resistance specifications before replacing.