STB80NF03L-04T4

Single FETs, MOSFETs Overview

The STB80NF03L-04T4 is an N-channel enhancement mode power MOSFET manufactured by STMicroelectronics using STripFET II technology. It features a 30 V drain-source breakdown voltage and supports a continuous drain current of 80 A at case temperature. The device exhibits a maximum on-resistance of 3.5 mΩ at VGS = 10 V. It is housed in a D2PAK (TO-263) surface-mount package with three terminals, designed for high-efficiency switching applications requiring low conduction losses.

Single FETs, MOSFETs Feature Summary

• Utilizes STripFET II technology to achieve ultra-low on-resistance for improved efficiency.
• Designed for high-current switching operations with robust thermal performance.
• Features enhanced avalanche ruggedness for reliable operation in inductive load environments.

Single FETs, MOSFETs Applications

• DC-DC converters
• Motor control circuits
• Power management systems

Single FETs, MOSFETs Procurement Notes

Verify component authenticity through authorized distribution channels due to the prevalence of counterfeits in the power semiconductor market. Confirm that the received units match the specific STB80NF03L-04T4 marking and packaging specifications. Ensure storage conditions comply with moisture sensitivity level requirements to prevent package damage during soldering processes.

Single FETs, MOSFETs Selection Notes

Select this component when designing circuits requiring a 30 V rating with high current capacity up to 80 A. The low RDS(on) makes it suitable for applications where minimizing conduction loss is critical. Consider the D2PAK package for surface-mount assembly constraints and adequate heat dissipation capabilities without requiring extensive external heatsinking in moderate duty cycle scenarios.

Single FETs, MOSFETs Part Context

This part belongs to the STB80NF series of N-channel power MOSFETs from STMicroelectronics. The series is characterized by the use of advanced planar strip technology to optimize the trade-off between on-resistance and breakdown voltage. These devices are engineered for general-purpose power switching applications across industrial and consumer electronics sectors.

Single FETs, MOSFETs Replacement Considerations

Direct pin-compatible substitutes may include other 30V 80A D2PAK MOSFETs with comparable RDS(on). Verify gate charge and thermal resistance parameters before substitution to ensure circuit stability and thermal management adequacy.