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STB9NK60ZDT4 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists STMicroelectronics. Its product description is MOSFET N-CH 600V 7A D2PAK. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for STB9NK60ZDT4
- Description：MOSFET N-CH 600V 7A D2PAK
- Series：SuperFREDmesh™
- Mfr：STMicroelectronics
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：600 V
- Current - Continuous Drain (Id) @ 25°C：7A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：950mOhm @ 3.5A, 10V
- Vgs(th) (Max) @ Id：4.5V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs：53 nC @ 10 V
- Vgs (Max)：±30V
- Input Capacitance (Ciss) (Max) @ Vds：1110 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：125W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：D2PAK
- Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Single FETs, MOSFETs datasheet and documents for STB9NK60ZDT4
Single FETs, MOSFETs Overview
The STB9NK60ZDT4 is a Zener-protected N-channel SuperFREDMESH Power MOSFET with an integrated fast body-drain recovery diode. It features a 600 V drain-source voltage, 7 A continuous drain current, and a maximum on-resistance of 0.95 Ω at VGS = 10 V. The device operates within a junction temperature range of -55 °C to 150 °C and dissipates up to 125 W. Packaged in a D²PAK (TO-263) tape and reel configuration, it includes built-in gate-source Zener protection rated at 30 V.
Single FETs, MOSFETs Feature Summary
- SuperFREDMESH technology integrates reduced on-resistance with a fast internal recovery diode.
- Built-in back-to-back Zener diodes protect the gate from voltage transients and enhance ESD capability.
- Extremely high dv/dt capability ensures robust performance in demanding switching applications.
- 100% avalanche tested for reliability under unclamped inductive load conditions.
Single FETs, MOSFETs Applications
- High-frequency switching power supplies
- DC-DC converters
- Motor control circuits
Single FETs, MOSFETs Procurement Notes
Verify the specific ordering code STB9NK60ZDT4 against manufacturer documentation to confirm the D²PAK tape and reel packaging format. Ensure compatibility with automated surface-mount assembly processes. Cross-reference thermal resistance values for your specific PCB copper area to validate heat dissipation requirements before finalizing procurement.
Single FETs, MOSFETs Selection Notes
Select this component when high dv/dt immunity and integrated body diode recovery are required. The SuperFREDMESH architecture offers lower on-resistance compared to standard PowerMESH devices. Consider the 0.95 Ω maximum RDS(on) and 125 W total power dissipation limits relative to your thermal management strategy and operating ambient temperatures.
Single FETs, MOSFETs Part Context
This part belongs to the SuperFREDMESH series by STMicroelectronics, combining MOSFET switching with a fast recovery diode. It complements the FDmesh™ technology portfolio. The device utilizes advanced trench gate and field plate technologies to optimize switching speed and conduction losses while maintaining high breakdown voltage capabilities.
Single FETs, MOSFETs Replacement Considerations
STP9NK60ZD and STF9NK60ZD are related variants within the same family but utilize different packaging formats. Verify pinout and thermal characteristics when substituting. No direct cross-brand equivalents are confirmed in the provided datasheet.
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