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STD10LN80K5 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists STMicroelectronics. Its product description is MOSFET N-CHANNEL 800V 8A DPAK. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for STD10LN80K5
- Description：MOSFET N-CHANNEL 800V 8A DPAK
- Series：MDmesh™ K5
- Mfr：STMicroelectronics
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：800 V
- Current - Continuous Drain (Id) @ 25°C：8A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：630mOhm @ 4A, 10V
- Vgs(th) (Max) @ Id：5V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs：15 nC @ 10 V
- Vgs (Max)：±30V
- Input Capacitance (Ciss) (Max) @ Vds：427 pF @ 100 V
- FET Feature：-
- Power Dissipation (Max)：110W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：TO-252 (DPAK)
- Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63
Single FETs, MOSFETs datasheet and documents for STD10LN80K5
Single FETs, MOSFETs Overview
The STD10LN80K5 is an N-channel enhancement mode power MOSFET from STMicroelectronics' MDmesh K5 series. It features a maximum drain-source voltage of 800 V and a continuous drain current of 10 A at case temperature. The device utilizes SuperMESH5 technology to achieve a low on-resistance of 420 mΩ at 10 V gate drive. Packaged in a surface-mount DPAK (TO-252) housing, it supports a junction temperature range from -55 °C to +150 °C with a maximum power dissipation of 130 W.
Single FETs, MOSFETs Feature Summary
- MDmesh K5 technology for optimized high-voltage performance
- Low on-resistance for reduced conduction losses
- Zener-protected gate structure for enhanced robustness
Single FETs, MOSFETs Applications
- High-voltage DC-DC converters
- Motor control circuits
- Power supply switching applications
Single FETs, MOSFETs Procurement Notes
Verify the specific datasheet revision and ordering suffixes directly with STMicroelectronics or authorized distributors before procurement. Confirm that the component matches the required thermal and electrical specifications for the target application environment. Ensure compliance with RoHS directives and check for any recent product change notifications regarding manufacturing origin or packaging updates.
Single FETs, MOSFETs Selection Notes
Select this component when designing circuits requiring high blocking voltage combined with moderate current handling capabilities. The DPAK package offers a balance between thermal performance and board space efficiency for surface-mount designs. Consider the gate charge characteristics relative to the driving circuit's switching frequency requirements to ensure optimal efficiency.
Single FETs, MOSFETs Part Context
This part belongs to the MDmesh K5 family, which integrates advanced trench gate and field-stop technologies. These devices are engineered to provide superior ruggedness and lower switching losses compared to previous generations. The series targets industrial and consumer applications demanding reliable high-voltage switching solutions.
Single FETs, MOSFETs Replacement Considerations
Consult official cross-reference lists for verified substitutes such as other MDmesh K5 variants with similar current ratings. Verify pinout compatibility and thermal pad configurations before replacing existing components in established designs.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
