Single FETs, MOSFETs STD12NF06L-1 product image

STD12NF06L-1

$0.77
  • Description:MOSFET N-CH 60V 12A IPAK
  • Series:STripFET™ II
  • Mfr:STMicroelectronics
  • Package:Tube

SKU:15ec0b427a42 Category: Brand:

  
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STD12NF06L-1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists STMicroelectronics. Its product description is MOSFET N-CH 60V 12A IPAK. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for STD12NF06L-1

  • Description:MOSFET N-CH 60V 12A IPAK
  • Series:STripFET™ II
  • Mfr:STMicroelectronics
  • Package:Tube
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):60 V
  • Current - Continuous Drain (Id) @ 25°C:12A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):5V, 10V
  • Rds On (Max) @ Id, Vgs:100mOhm @ 6A, 10V
  • Vgs(th) (Max) @ Id:2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:10 nC @ 5 V
  • Vgs (Max):±16V
  • Input Capacitance (Ciss) (Max) @ Vds:350 pF @ 25 V
  • FET Feature:-
  • Power Dissipation (Max):42.8W (Tc)
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Through Hole
  • Supplier Device Package:IPAK
  • Package / Case:TO-251-3 Short Leads, IPAK, TO-251AA

Single FETs, MOSFETs datasheet and documents for STD12NF06L-1

STD12NF06L-1

Single FETs, MOSFETs Overview

The STD12NF06L-1 is an N-channel Power MOSFET manufactured by STMicroelectronics using the STripFET II process. It features a 60 V drain-source breakdown voltage and supports a continuous drain current of 12 A. The device offers a typical on-resistance of 80 mOhms and a gate charge of 10 nC, with a maximum gate-source voltage of ±16 V. It operates within a temperature range of -55 °C to +175 °C and dissipates up to 30 W of power. Packaged in a TO-251-3 (IPAK) through-hole format, it includes a single enhancement-mode channel.

Single FETs, MOSFETs Feature Summary

  • Utilizes STripFET II technology to minimize input capacitance and gate charge for high-efficiency switching.
  • Provides exceptional dv/dt capability suitable for demanding power conversion environments.
  • Designed as a primary switch for advanced isolated DC-DC converters requiring low gate charge driving.

Single FETs, MOSFETs Applications

  • Primary switching in high-efficiency isolated DC-DC converters
  • Telecommunications power supply circuits
  • Computer application power management systems

Single FETs, MOSFETs Procurement Notes

Verify the specific package variant, as datasheets may reference IPAK or TO-251-3 designations for this part number. Confirm RoHS compliance status directly with the manufacturer or authorized distributors prior to ordering. Ensure the procurement documentation matches the exact STD12NF06L-1 identifier to avoid substitution errors with similar series components.

Single FETs, MOSFETs Selection Notes

Select this component when designing isolated DC-DC converters that require low gate drive power consumption. The 60 V rating and 12 A current capacity suit medium-voltage applications. The TO-251-3 package facilitates through-hole mounting for robust mechanical connections. Consider the 175 °C junction temperature limit for high-thermal environments.

Single FETs, MOSFETs Part Context

This device belongs to the STripFET II family of N-channel power MOSFETs from STMicroelectronics. The series targets industrial and automotive sectors, offering a balance of low on-resistance and fast switching speeds. The STD12NF06L-1 specifically addresses applications needing efficient power handling in compact through-hole packages.

Single FETs, MOSFETs Replacement Considerations

Consult official STMicroelectronics cross-reference lists for verified substitutes. Generic equivalents may not replicate the specific STripFET II characteristics or dv/dt performance required for isolated converter designs.

STD12NF06L-1STD12NF06L-1
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