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STD18N55M5 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists STMicroelectronics. Its product description is MOSFET N-CH 550V 16A DPAK. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for STD18N55M5
- Description：MOSFET N-CH 550V 16A DPAK
- Series：MDmesh™ V
- Mfr：STMicroelectronics
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：550 V
- Current - Continuous Drain (Id) @ 25°C：16A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：192mOhm @ 8A, 10V
- Vgs(th) (Max) @ Id：5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：31 nC @ 10 V
- Vgs (Max)：±25V
- Input Capacitance (Ciss) (Max) @ Vds：1260 pF @ 100 V
- FET Feature：-
- Power Dissipation (Max)：110W (Tc)
- Operating Temperature：150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：DPAK
- Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63
Single FETs, MOSFETs datasheet and documents for STD18N55M5
Single FETs, MOSFETs Overview
The STD18N55M5 is an N-channel Power MOSFET utilizing MDmesh M5 vertical process technology and PowerMESH horizontal layout. It provides a drain-source breakdown voltage of 550 V, a maximum on-resistance of 192 mΩ at 10 V gate drive, and a continuous drain current of 16 A at 25 °C case temperature. The device operates with a junction temperature range up to 150 °C and features low gate charge and input capacitance for efficient switching.
Single FETs, MOSFETs Feature Summary
- 100% avalanche tested
- Excellent switching performance
- Extremely low RDS(on)
- Low gate charge and input capacitance
Single FETs, MOSFETs Applications
- Switching applications
Single FETs, MOSFETs Procurement Notes
Verify the specific package variant (Type A2 or Type C3) required for your design, as mechanical dimensions differ between them. Confirm environmental compliance grades such as ECOPACK availability directly with STMicroelectronics sales offices. Ensure ordering suffixes match the desired tape and reel specifications before finalizing procurement.
Single FETs, MOSFETs Selection Notes
Select this component for high-power applications requiring superior efficiency due to its extremely low on-resistance. Consider the thermal resistance values when designing heat dissipation strategies. Verify that the operating conditions remain within the absolute maximum ratings, particularly regarding pulsed drain current and peak diode recovery voltage slope limits.
Single FETs, MOSFETs Part Context
This part belongs to the MDmesh M5 series of super-junction high-voltage MOSFETs from STMicroelectronics. These devices are optimized for hard switching applications like PFC and PWM topologies. The STD18N55M5 shares similar technology with other variants in the portfolio but offers specific electrical characteristics tailored for general switching needs.
Single FETs, MOSFETs Replacement Considerations
STP18N55M5 is listed as a related product in the same datasheet family. Verify pinout compatibility and exact electrical parameter matches before substitution. Consult official documentation for any differences in package types or thermal characteristics.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
