STD4NK60ZT4

Single FETs, MOSFETs Overview

The STD4NK60ZT4 is an N-channel Power MOSFET manufactured by STMicroelectronics, utilizing SuperMESH technology for optimized performance. It features a 600V drain-source voltage rating and a continuous drain current of 4A at 25°C case temperature. The device incorporates a built-in Zener diode between the gate and source terminals to protect against static discharge and voltage transients. Key electrical parameters include a maximum on-resistance of 2Ω at 10V gate drive with 2A drain current, a threshold voltage of 4.5V at 50µA, and a maximum power dissipation of 70W at 25°C case temperature. The avalanche energy rating is specified at 120mJ.

Single FETs, MOSFETs Feature Summary

• SuperMESH technology integration for reduced on-resistance and enhanced dv/dt capability
• Integrated Zener protection between gate and source terminals for transient immunity
• Single configuration with built-in body diode
• High avalanche energy handling capability

Single FETs, MOSFETs Applications

• Switch-mode power supplies (SMPS)
• DC-DC converters
• AC-DC offline converters
• Motor control circuits

Single FETs, MOSFETs Procurement Notes

Verify the component authenticity through authorized STMicroelectronics distributors or certified suppliers. Confirm the package marking matches the TO-252AA specification. Ensure the ordering suffix corresponds to the required tape and reel quantity if applicable. Check for RoHS compliance status as indicated in the official datasheet. Validate the manufacturing date code to ensure freshness and proper storage conditions prior to soldering.

Single FETs, MOSFETs Selection Notes

Select this component for high-voltage switching applications requiring robust gate protection. The integrated Zener diode simplifies circuit design by eliminating external protection components. Consider the thermal management requirements given the 70W power dissipation rating. Evaluate the 2Ω on-resistance against efficiency targets for the specific load current. Ensure the gate drive voltage supports the 10V condition for optimal conduction performance.

Single FETs, MOSFETs Part Context

This part belongs to STMicroelectronics' SuperMESH Power MOSFET portfolio, designed for general-purpose high-voltage switching. It complements other devices in the STD series, offering variations in current ratings and packages. The SuperMESH technology represents an evolution from earlier PowerMESH designs, focusing on improved trade-offs between on-resistance and switching losses for industrial and consumer power conversion systems.

Single FETs, MOSFETs Replacement Considerations

Direct replacements must match the 600V rating, N-channel configuration, and TO-252AA package. Verify that substitute parts offer comparable on-resistance and gate charge characteristics. Ensure any alternative also includes gate-source protection if required by the original design constraints.