STD5N65M6

Single FETs, MOSFETs Overview

The STD5N65M6 is an N-channel 650 V MDmesh M6 power MOSFET in a DPAK package. It features a typical RDS(on) of 1.4 Ohms and a continuous drain current of 3.5 A. The device incorporates Zener protection on the gate-source terminals and has undergone 100% avalanche testing. Key electrical characteristics include a maximum gate-source voltage of ±20 V, a threshold voltage range of 2 V to 4 V, and a total gate charge of approximately 8.8 nC. Operating temperatures span from -55 °C to +150 °C with a power dissipation rating of 2 W.

Single FETs, MOSFETs Feature Summary

• MDmesh M6 technology providing improved RDS(on) per area and effective switching behavior
• Integrated Zener protection for enhanced gate robustness
• 100% avalanche tested for increased reliability

Single FETs, MOSFETs Applications

• Hard switching power supplies
• High-efficiency DC-DC converters
• Power factor correction circuits

Single FETs, MOSFETs Procurement Notes

Verify the NRND status before finalizing designs, as this indicates the component is not recommended for new designs. Confirm the specific ordering suffix matches the required tape-and-reel or tube packaging format. Ensure the DPAK footprint aligns with the target PCB layout constraints. Cross-reference the latest datasheet revision to confirm any updates to thermal resistance values or absolute maximum ratings prior to procurement.

Single FETs, MOSFETs Selection Notes

Select this part when a compact DPAK solution is required for low-current 650 V applications. The MDmesh M6 generation offers superior switching performance compared to previous iterations. Consider the 1.4 Ohm RDS(on) for conduction loss calculations at the expected operating current. Verify that the 3.5 A continuous current rating meets the peak load requirements of the specific circuit topology.

Single FETs, MOSFETs Part Context

This component belongs to the STMicroelectronics MDmesh M6 family of super-junction power MOSFETs. The series is designed to replace older generations by offering better figure-of-merit metrics. The DPAK package provides a balance between thermal performance and space efficiency for surface-mount applications. This technology targets high-voltage hard-switching environments requiring robust gate protection.

Single FETs, MOSFETs Replacement Considerations

Check for direct pin-compatible alternatives within the same MDmesh M6 series that offer lower RDS(on) if higher current capacity is needed. Verify that any substitute maintains the 650 V breakdown voltage and DPAK-3 (TO-252-3) package dimensions.