STD64N4F6AG

Single FETs, MOSFETs Overview

The STD64N4F6AG is an automotive-grade N-channel Power MOSFET from STMicroelectronics, utilizing STripFET F6 technology. It features a 40 V drain-source voltage (Vds) and a continuous drain current (Id) of 54 A at case temperature. The device exhibits a typical on-resistance (Rds(on)) of 7 mOhm with a gate-source voltage of 10 V. Key electrical parameters include a gate charge (Qg) of 38 nC, a threshold voltage (Vgs(th)) of 2 V, and a power dissipation (Pd) of 60 W at 25°C case temperature. It operates within a junction temperature range of -55°C to +175°C and is qualified under AEC-Q101 standards for automotive reliability.

Single FETs, MOSFETs Feature Summary

• Designed specifically for automotive applications with AEC-Q101 qualification
• Features very low on-resistance for improved efficiency
• Provides high avalanche ruggedness for robust operation
• Achieves low gate drive power loss through optimized gate charge

Single FETs, MOSFETs Applications

• Automotive power distribution systems
• Motor control circuits in vehicles
• High-side or low-side switching applications requiring automotive grade components

Single FETs, MOSFETs Procurement Notes

Verify the specific package type and tape/reel specifications against the official datasheet before ordering. Confirm that the component meets the required AEC-Q101 qualification levels for your specific automotive application. Ensure compatibility with your PCB footprint, as the TO-252 (DPAK) package dimensions are critical for assembly. Check for any recent lifecycle status updates, such as NRND designations, which may affect long-term supply availability.

Single FETs, MOSFETs Selection Notes

Select this component when a 40 V N-channel MOSFET with automotive qualification is required. The 7 mOhm Rds(on) makes it suitable for high-current applications up to 54 A. Consider the TO-252 package for surface mount designs where thermal performance and space constraints align with its 60 W dissipation rating. Compare gate charge requirements against your driver capabilities to ensure efficient switching speeds.

Single FETs, MOSFETs Part Context

This part belongs to the STripFET F6 series, which utilizes advanced trench gate technology to minimize on-resistance while maintaining fast switching characteristics. The family is targeted at automotive markets, emphasizing reliability and thermal stability. The STD64N4F6AG represents a balance between current handling capability and low conduction losses, fitting into STMicroelectronics' portfolio of automotive-grade discrete semiconductors.

Single FETs, MOSFETs Replacement Considerations

Direct substitutes must match the 40 V, 54 A, 7 mOhm specifications and TO-252 package. Verify pinout compatibility and thermal resistance values. Cross-reference with other ST Automotive N-channel MOSFETs in the same voltage class if exact matches are unavailable.