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Product Detailed Parameters
- Description：TRANS NPN/PNP 400V 3A 8-DIP
- Series：-
- Mfr：STMicroelectronics
- Package：Tube
- Transistor Type：1 NPN, 1 PNP
- Current - Collector (Ic) (Max)：3A
- Voltage - Collector Emitter Breakdown (Max)：400V
- Vce Saturation (Max) @ Ib, Ic：500mV @ 200mA, 1A
- Current - Collector Cutoff (Max)：100µA
- DC Current Gain (hFE) (Min) @ Ic, Vce：18 @ 700mA, 5V
- Power - Max：3W
- Frequency - Transition：-
- Operating Temperature：150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：8-DIP (0.300", 7.62mm)
- Supplier Device Package：8-DIP
- Grade：-
- Qualification：-
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Overview
The STD830CP40 is a hybrid complementary pair of power bipolar transistors manufactured using high voltage multi-epitaxial planar technology. It integrates an NPN and PNP transistor in a single DIP-8 package with separated dual island terminals for higher assembly flexibility. The device supports a collector-emitter voltage (VCEO) of 400 V, a continuous collector current (IC) of 3 A, and a peak collector current (ICM) of 6 A. Total dissipation reaches 3 W at 25 °C ambient or 45 W at 25 °C case temperature. Key electrical characteristics include low saturation voltages and controlled dynamic parameters suitable for medium voltage applications.
Feature Summary
- Hybrid complementary pair configuration integrating NPN and PNP transistors in one package
- Dual island DIP-8 housing with separated terminals to enhance assembly flexibility
- High voltage multi-epitaxial planar technology enabling fast switching speeds
- Low spread of dynamic parameters ensuring consistent performance
Applications
- Compact fluorescent lamp (CFL) circuits operating on 220 V mains
Procurement Notes
Verify the specific ordering code STD830CP40 against the manufacturer's official documentation to confirm current production status and availability. Ensure that the selected component meets all absolute maximum ratings and thermal requirements for the intended application environment. Cross-reference datasheet revisions to guarantee compatibility with existing design specifications and safety standards.
Selection Notes
Select this component when a compact solution requiring both NPN and PNP power switching is necessary. The dual island DIP-8 package facilitates easier PCB layout compared to standard configurations. Consider the thermal resistance values and derating curves to ensure adequate heat dissipation under load conditions. Verify that the 400 V rating aligns with the system's voltage requirements.
Part Context
This part belongs to STMicroelectronics' range of power bipolar junction transistors designed for energy-efficient applications. It utilizes high voltage multi-epitaxial planar technology to achieve fast switching and medium voltage capability. The product is categorized within the company's discrete semiconductor portfolio, specifically targeting power actuator and lighting driver solutions.
Replacement Considerations
Consult official STMicroelectronics documentation for verified substitute part numbers. Do not assume cross-compatibility with other complementary pairs without verifying pinout, voltage ratings, and thermal characteristics.
