STF5N95K3

Single FETs, MOSFETs Overview

The STF5N95K3 is an N-channel Power MOSFET from STMicroelectronics, utilizing MDmesh K3 technology. It features a 950 V drain-source breakdown voltage and a continuous drain current of 4 A. The device has a typical on-resistance of 3 Ohms and operates within a temperature range of -55 °C to +150 °C. Packaged in TO-220-3 for through-hole mounting, it offers a power dissipation of 25 W. Key electrical characteristics include a gate charge of 19 nC, threshold voltage of 3 V, and maximum gate-source voltage of ±30 V.

Single FETs, MOSFETs Feature Summary

• MDmesh K3 technology provides extremely low on-resistance and superior dynamic performance.
• High avalanche capability with 100% avalanche testing for demanding applications.
• Extremely high dv/dt capability and very low intrinsic capacitance.
• Improved diode reverse recovery characteristics.

Single FETs, MOSFETs Applications

• High-voltage switching circuits
• Power supplies requiring robust avalanche performance
• Industrial control systems

Single FETs, MOSFETs Procurement Notes

Verify the specific package variant (TO-220-3) and manufacturer authenticity when sourcing. Confirm RoHS compliance status via official documentation. Ensure thermal management aligns with the 25 W power dissipation rating. Check for any specific handling requirements associated with high-voltage MOSFETs.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring high voltage isolation up to 950 V with moderate current handling. The TO-220-3 package suits through-hole PCB layouts. Consider the 3 Ohm on-resistance for conduction loss calculations. Evaluate thermal constraints given the 25 W dissipation limit in your enclosure design.

Single FETs, MOSFETs Part Context

Part of the MDmesh K3 series, designed for high-voltage applications. Combines optimized vertical structure with established strip-based layout. Offers improved dynamic performance compared to previous generations. Suitable for environments requiring high reliability and avalanche ruggedness.

Single FETs, MOSFETs Replacement Considerations

STU5N95K3 (IPAK package), STD5N95K3 (DPAK package). Verify pinout compatibility and thermal resistance differences before substitution.

Single FETs, MOSFETs FAQ

Is the STF5N95K3 avalanche tested?

Yes, all devices in this series are 100% avalanche tested to ensure high avalanche capability.

What technology does the STF5N95K3 use?

It utilizes STMicroelectronics' MDmesh K3 technology, which combines an optimized vertical structure with strip-based layout improvements.