STFI13N80K5

Single FETs, MOSFETs Overview

The STFI13N80K5 is an N-channel Power MOSFET utilizing MDmesh K5 technology, housed in an I²PAKFP (TO-281) package. It features a drain-source voltage of 800 V and a continuous drain current of 12 A at 25 °C case temperature. The static drain-source on-resistance is typically 0.37 Ω with a maximum of 0.45 Ω at VGS = 10 V and ID = 6 A. Total gate charge is 29 nC at VGS = 10 V. The device includes built-in back-to-back Zener diodes for ESD protection and has a total dissipation of 35 W at 25 °C.

Single FETs, MOSFETs Feature Summary

• Fully insulated low-profile package providing increased creepage path from pin to heatsink plate
• Integrated back-to-back Zener diodes designed to enhance ESD capability without external components
• 100% avalanche tested for ruggedness under unclamped inductive load conditions

Single FETs, MOSFETs Applications

• Switching applications

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix and environmental compliance grade (ECOPACK) against the latest manufacturer documentation before procurement. Confirm that the I²PAKFP (TO-281) package dimensions align with the target PCB footprint and thermal management requirements. Ensure the selected component matches the production data status indicated in the official datasheet.

Single FETs, MOSFETs Selection Notes

Select this component for high-voltage applications requiring superior power density and efficiency. The MDmesh K5 technology provides industry-leading figure of merit and ultra-low gate charge. Consider the 35 W power dissipation limit and the need for adequate heatsinking to maintain junction temperatures within the -55 °C to 150 °C operating range.

Single FETs, MOSFETs Part Context

This part belongs to the STB13/STW13/STFU13/STFI13 series of N-channel 800 V Power MOSFETs. While sharing similar electrical characteristics such as 800 V rating and 12 A current capacity, the STFI13N80K5 is distinct due to its I²PAKFP (TO-281) package, which offers full insulation and enhanced creepage compared to standard TO-220 or D2PAK variants.

Single FETs, MOSFETs Replacement Considerations

Direct substitutes include other members of the STMicroelectronics MDmesh K5 family with identical electrical ratings but different packages, such as STW13N80K5 (TO-247), STFU13N80K5 (TO-220FP), or STB13N80K5 (D2PAK). Verify package compatibility and thermal resistance differences when substituting.

Single FETs, MOSFETs FAQ

What is the purpose of the integrated Zener diodes in the STFI13N80K5?

The built-in back-to-back Zener diodes are specifically designed to enhance the electrostatic discharge (ESD) capability of the device, eliminating the need for external protection components.

How does the I²PAKFP package differ from standard packages?

The I²PAKFP (TO-281) package is fully insulated and low-profile, providing an increased creepage path from the pins to the heatsink plate compared to non-insulated packages.