SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The STG200G65FD8AG is an automotive-grade trench gate field-stop IGBT die from the M series, rated at 650 V and 200 A. It features a low collector-emitter saturation voltage of 1.55 V typical at 200 A and exhibits a positive temperature coefficient for VCE(sat). The device is qualified to AEC-Q101 standards and utilizes D8 packing.
Verify that the specific ordering suffix matches the required package configuration and tape-and-reel specifications. Confirm that the component meets the necessary AEC-Q101 reliability requirements for your target automotive application before finalizing procurement.
Select this component for applications requiring high current handling and robust thermal performance in automotive environments. The positive temperature coefficient facilitates reliable parallel operation without active current sharing circuits, simplifying system design for high-power modules.
This part belongs to STMicroelectronics' M series of high-efficiency IGBTs. It is designed specifically for demanding automotive power electronics, offering a balance of low conduction losses and high switching performance within a compact die format suitable for advanced packaging solutions.
Check datasheets for compatible alternatives such as STG200M65F2D8AG, ensuring identical voltage, current ratings, and package compatibility before substitution.