STGB10NB60ST4

Overview

The STGB10NB60ST4 is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by STMicroelectronics. It utilizes the PowerMESH™ technology and is housed in a surface-mount TO-263 (D2PAK) package with three pins. The device supports a maximum collector-emitter voltage of 600 V and a continuous collector current of 29 A at 25°C, with a peak pulse current capability of 80 A. Maximum power dissipation is rated at 80 W. Key electrical parameters include a gate charge of 33 nC and a collector-emitter saturation voltage of 1.75 V at 15 V gate drive and 10 A collector current. Switching times are specified as 700 ns for turn-on and 1.2 µs for turn-off under test conditions of 480 V, 10 A, 1 kΩ, and 15 V. Operating junction temperature ranges from -55°C to 150°C.

Feature Summary

• Advanced PowerMESH™ technology providing optimized trade-off between switching performance and low on-state behavior
• Tail-less 600 V IGBT design for high-power surface mount applications
• High short-circuit ruggedness with defined switching energy characteristics

Applications

• High-frequency power conversion circuits requiring surface mount topology
• Industrial motor drives utilizing soft-switching techniques
• Resonant converter topologies benefiting from controlled tail current

Procurement Notes

Verify component authenticity through authorized distribution channels due to market prevalence of counterfeits. Confirm lot traceability and RoHS compliance status prior to integration. Note that this specific part number is listed as obsolete or end-of-life; ensure supply chain stability for long-term production requirements. Validate packaging integrity upon receipt to prevent moisture damage during soldering processes.

Selection Notes

Select this component for designs requiring 600 V blocking capability with moderate current handling in a D2PAK footprint. Consider thermal management strategies given the 80 W dissipation rating. Evaluate gate drive requirements against the 33 nC charge specification. Compare alternative packages if higher current density or different mounting constraints exist within the system architecture.

Part Context

This device belongs to the STG(B,P)10NB60S series, representing STMicroelectronics' Tail-less 600 V IGBT V Series. It shares technological lineage with other PowerMESH devices but is distinguished by its specific surface-mount packaging and tailored switching characteristics for resonant applications.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Verify compatibility with direct replacements such as STGP10NB60SD only after confirming pinout and thermal parameter alignment.