STGB10NC60HDT4

STGB10NC60HDT4

$2.13
  • Description:IGBT 600V 20A D2PAK
  • Series:PowerMESH™

SKU:f7bd8b8fb095 Category: Brand:

  
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Product Detailed Parameters

  • Description:IGBT 600V 20A D2PAK
  • Series:PowerMESH™
  • Mfr:STMicroelectronics
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • IGBT Type:-
  • Voltage - Collector Emitter Breakdown (Max):600 V
  • Current - Collector (Ic) (Max):20 A
  • Current - Collector Pulsed (Icm):30 A
  • Vce(on) (Max) @ Vge, Ic:2.5V @ 15V, 5A
  • Power - Max:65 W
  • Switching Energy:31.8µJ (on), 95µJ (off)
  • Input Type:Standard
  • Gate Charge:19.2 nC
  • Td (on/off) @ 25°C:14.2ns/72ns
  • Test Condition:390V, 5A, 10Ohm, 15V
  • Reverse Recovery Time (trr):22 ns
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package:D2PAK
  • Grade:-
  • Qualification:-

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STGB10NC60HDT4

Overview

STGB10NC60HDT4 is a single N-channel IGBT from STMicroelectronics, rated at 600 V collector-emitter voltage and 20 A continuous collector current. It utilizes PowerMESH technology for optimized switching and conduction performance. The device features a low on-state saturation voltage of 2.5 V at 15 V gate drive and 12 A collector current. Maximum power dissipation is 65 W. Operating temperature range spans from -55°C to +150°C junction temperature. The component is housed in a surface-mount TO-263 package with three pins.

Feature Summary

  • Advanced PowerMESH technology ensures an optimal balance between low on-state voltage drop and fast switching performance.
  • Low CRES/CIES ratio minimizes susceptibility to cross-conduction issues in high-frequency applications.
  • Integrated ultra-fast recovery antiparallel diode provides soft reverse recovery characteristics.

Applications

  • Resonant converter topologies
  • Soft-switching power supply designs
  • High-frequency inverter circuits

Procurement Notes

Verify the specific ordering suffix against official STMicroelectronics documentation to confirm exact packaging and reel specifications. Ensure compatibility with RoHS standards if required by the target assembly process. Cross-reference datasheet revision numbers to validate parameter consistency before finalizing procurement orders.

Selection Notes

Select this component for applications requiring high switching frequencies and robust thermal performance within a compact surface-mount footprint. Evaluate the 2.5 V saturation voltage against system efficiency targets. Confirm that the 600 V rating aligns with peak voltage stresses in the intended circuit topology.

Part Context

The STGB10NC60HDT4 belongs to the STGx10NC60KD series of very fast IGBTs. This series is engineered for industrial and consumer applications demanding high reliability. The device represents a specific variant within STMicroelectronics' broader portfolio of trench-gate field-stop IGBT technologies.

Replacement Considerations

Direct substitutes include STGB10NC60KDT4. Verify pinout compatibility and electrical parameters such as Vceo and Ic when considering alternative packages or updated series revisions from the manufacturer.

STGB10NC60HDT4STGB10NC60HDT4
$2.13
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