ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：IGBT 600V 20A 65W D2PAK
- Series：PowerMESH™
- Mfr：STMicroelectronics
- Package：Tape & Reel (TR),Cut Tape (CT)
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：20 A
- Current - Collector Pulsed (Icm)：30 A
- Vce(on) (Max) @ Vge, Ic：2.5V @ 15V, 5A
- Power - Max：65 W
- Switching Energy：55µJ (on), 85µJ (off)
- Input Type：Standard
- Gate Charge：19 nC
- Td (on/off) @ 25°C：17ns/72ns
- Test Condition：390V, 5A, 10Ohm, 15V
- Reverse Recovery Time (trr)：22 ns
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Supplier Device Package：D2PAK
- Grade：-
- Qualification：-
Download product information
Overview
The STGB10NC60KDT4 is an N-channel IGBT from the PowerMESH™ KD series, manufactured by STMicroelectronics. It features a maximum collector current (Ic) of 20 A and a collector-emitter voltage (Vceo) of 600 V. The device operates within a temperature range of -55°C to 150°C TJ. Key electrical parameters include a maximum power dissipation (Pd) of 65 W, a gate-emitter voltage (Vge) limit of ±20 V, and a collector-emitter saturation voltage (Vce(sat)) of 2.5 V at specified conditions. It utilizes a TO-263 surface-mount package with three pins.
Feature Summary
- Advanced PowerMESH technology ensures an optimal balance between switching performance and low on-state behavior.
- Designed for resonant or soft-switching applications due to very fast switching characteristics.
- Features a short-circuit withstand time of 10 μs for enhanced ruggedness.
Applications
- Resonant converter circuits
- Soft-switching power supplies
- High-frequency inverter topologies
Procurement Notes
Verify the specific ordering suffix 'T4' corresponds to the tape-and-reel packaging configuration required for automated assembly processes. Confirm that the component meets RoHS compliance standards as indicated in official documentation before finalizing procurement specifications for environmental regulations.
Selection Notes
Select this component when designing circuits requiring high-speed switching with minimal cross-conduction susceptibility. The low C_res/C_ies ratio makes it suitable for applications where parasitic turn-on must be avoided. Ensure the thermal management solution supports the 65 W power dissipation rating under expected operating loads.
Part Context
This part belongs to the STGx10NC60KD series, which includes variants like STGB14NC60KDT4. These devices share the same 600 V voltage class and PowerMESH™ KD technology platform but differ in current ratings. The series is characterized by its ultra-fast recovery antiparallel diode and optimized trade-off between conduction and switching losses.
Replacement Considerations
Direct substitutes within the same family include STGB14NC60KDT4 for higher current capacity. Verify pinout compatibility and thermal resistance values when replacing with other TO-263 packaged IGBTs from different manufacturers to ensure equivalent performance in existing layouts.
