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Product Detailed Parameters
- Description：IGBT 600V 20A 65W D2PAK
- Series：PowerMESH™
- Mfr：STMicroelectronics
- Package：Tape & Reel (TR)
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：20 A
- Current - Collector Pulsed (Icm)：30 A
- Vce(on) (Max) @ Vge, Ic：2.5V @ 15V, 5A
- Power - Max：65 W
- Switching Energy：55µJ (on), 85µJ (off)
- Input Type：Standard
- Gate Charge：19 nC
- Td (on/off) @ 25°C：17ns/72ns
- Test Condition：390V, 5A, 10Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Supplier Device Package：D2PAK
- Grade：-
- Qualification：-
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Overview
The STGB10NC60KT4 is a 600 V N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by STMicroelectronics. It features a maximum continuous collector current of 20 A and a maximum power dissipation of 65 W at 25 °C. The device utilizes the PowerMESH technology for optimized switching and conduction performance. It operates within a junction temperature range of -55 °C to 150 °C and supports a gate-emitter voltage of ±20 V. The component is housed in a surface-mount TO-263 package with three pins.
Feature Summary
- Developed using advanced PowerMESH technology to ensure an optimal balance between switching speed and low on-state voltage drop.
- Designed specifically for resonant or soft-switching applications requiring high-frequency operation.
Applications
- Resonant converters
- Soft-switching power supplies
Procurement Notes
Verify the specific suffix 'T4' against official documentation, as it indicates tape-and-reel packaging. Confirm availability status directly with the manufacturer or authorized distributors, as this part number may be subject to discontinuation or limited supply conditions. Ensure the ordering code matches the required package variant.
Selection Notes
Select this component when designing circuits that require a 600 V blocking capability with moderate current handling up to 20 A. The PowerMESH process makes it suitable for applications prioritizing efficiency in resonant topologies. Verify thermal management requirements for the TO-263 package to ensure the junction temperature remains within the specified 150 °C limit during operation.
Part Context
This IGBT belongs to the STGx10NC60KD series from STMicroelectronics. It shares core electrical characteristics with other members of this family, such as the STGB10NC60KDT4, differing primarily in packaging format. The series is characterized by its use of PowerMESH technology for improved performance in high-frequency switching environments.
Replacement Considerations
The STGB10NC60KDT4 is a verified alternative within the same product family, offering identical electrical specifications but potentially differing in packaging configuration. Cross-reference datasheets to confirm pinout compatibility and thermal resistance values before substitution.
