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Product Detailed Parameters
- Description：IGBT TRENCH FS 600V 30A TO-263
- Series：-
- Mfr：STMicroelectronics
- Package：Tape & Reel (TR),Cut Tape (CT)
- IGBT Type：Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：30 A
- Current - Collector Pulsed (Icm)：60 A
- Vce(on) (Max) @ Vge, Ic：2V @ 15V, 15A
- Power - Max：115 W
- Switching Energy：136µJ (on), 207µJ (off)
- Input Type：Standard
- Gate Charge：81 nC
- Td (on/off) @ 25°C：24.5ns/118ns
- Test Condition：400V, 15A, 10Ohm, 15V
- Reverse Recovery Time (trr)：103 ns
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Supplier Device Package：TO-263 (D2PAK)
- Grade：-
- Qualification：-
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Overview
The STGB15H60DF is an N-channel IGBT from the H series, utilizing a trench gate field-stop structure. It features a maximum collector-emitter voltage (VCEO) of 600 V and a continuous collector current (Ic) of 15 A. The device operates with a maximum power dissipation (Pd) of 30 W in a TO-220 package for through-hole mounting. It has three pins, a switching speed of 1 MHz, and a maximum junction temperature of 175°C. The typical saturation voltage (VCE(sat)) is 2 V, with a maximum gate-emitter voltage (VGEO) of 20 V.
Feature Summary
- High-speed switching capability optimized for high-frequency converters
- Tight parameter distribution enabling safer paralleling operation
- Ultrafast soft recovery antiparallel diode integration
Applications
- High switching frequency converters
- Motor control applications
- Induction heating systems
Procurement Notes
Verify the specific suffix 'B' against official STMicroelectronics documentation, as standard datasheets often list 'STGP15H60DF' or 'STGF15H60DF'. Confirm pinout compatibility and thermal resistance values if the suffix indicates a variant. Ensure the component matches the required 600V/15A specifications before integration into designs.
Selection Notes
Select this component for applications requiring a balance between conduction and switching losses. The slightly positive VCE(sat) temperature coefficient facilitates parallel operation. Consider the TO-220 package constraints for thermal management and ensure the driving circuit supports the 1 MHz switching speed requirements.
Part Context
This part belongs to the H series of IGBTs developed using proprietary trench gate field-stop technology. It shares architectural similarities with other H series devices like STGP15H60DF and STGD5H60DF, focusing on efficiency in high-frequency conversion. The series is designed to minimize tail current and saturation voltage.
Replacement Considerations
Direct substitutes include STGP15H60DF and STGF15H60DF within the same H series family. Verify that any replacement maintains the 600V rating, 15A current capacity, and TO-220 package dimensions to ensure mechanical and electrical compatibility.
