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Product Detailed Parameters
- Description：IGBT 420V 30A TO-262
- Series：PowerMESH™
- Mfr：STMicroelectronics
- Package：Tube
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：420 V
- Current - Collector (Ic) (Max)：30 A
- Current - Collector Pulsed (Icm)：40 A
- Vce(on) (Max) @ Vge, Ic：1.7V @ 4.5V, 10A
- Power - Max：150 W
- Switching Energy：-
- Input Type：Logic
- Gate Charge：29 nC
- Td (on/off) @ 25°C：650ns/13.5µs
- Test Condition：300V, 10A, 5V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-262-3 Long Leads, I2PAK, TO-262AA
- Supplier Device Package：TO-262 (I2PAK)
- Grade：-
- Qualification：-
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Overview
The STGB18N40LZ-1 is an automotive-grade Insulated Gate Bipolar Transistor (IGBT) from STMicroelectronics, designed for coil driving in harsh automotive ignition systems. It utilizes PowerMESH technology to achieve very low on-state voltage and high short-circuit withstand capability. The device features a logic-level gate drive with integrated ESD protection and an internal gate resistor, eliminating the need for external protection circuitry. Key electrical characteristics include a collector-emitter voltage of 390 V and a continuous collector current of 18 A at 25 °C. It offers a short-circuit withstand time of 3 µs and is qualified under the AEC-Q101 standard.
Feature Summary
- AEC-Q101 qualified for automotive reliability
- PowerMESH technology for low saturation voltage
- Integrated gate resistor and ESD protection
- High short-circuit withstand energy capability
Applications
- Automotive ignition systems
- Coil driving applications
- Harsh environment power switching
Procurement Notes
Verify the specific suffix '-1' against official STMicroelectronics documentation to confirm pinout or parameter variations compared to the standard STGB18N40LZ. Ensure the component meets AEC-Q101 requirements for your target automotive application. Cross-reference datasheets for thermal resistance values and maximum ratings before finalizing procurement specifications.
Selection Notes
Select this IGBT for applications requiring robust short-circuit withstand capability and low conduction losses in automotive environments. The integrated gate resistor simplifies driver design by reducing external component count. Consider the 390 V rating for compatibility with standard automotive electrical systems. Verify thermal management solutions align with the device's power dissipation limits under peak load conditions.
Part Context
This component belongs to STMicroelectronics' PowerMESH IGBT family, optimized for automotive use. It shares architectural similarities with other models like the STGB18N40LZT4 and STGD25N40LZAG, which also feature internal clamping and logic-level gates. The series is characterized by high reliability and performance in high-temperature operating ranges typical of engine compartments.
Replacement Considerations
Direct substitutes within the same family include the STGB18N40LZT4. Verify package compatibility and exact electrical parameters such as short-circuit energy ratings when considering alternative part numbers from ST or other manufacturers.
