SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The STGB18N40LZT4 is an automotive-grade Insulated Gate Bipolar Transistor (IGBT) from the PowerMESH™ series, manufactured by STMicroelectronics. It features a maximum collector-emitter voltage of 390 V and a continuous collector current of 18 A at 25°C. The device operates within a junction temperature range of -55°C to +175°C and is housed in a DPAK surface-mount package. It holds AEC-Q101 qualification for harsh automotive environments.
Verify component authenticity through authorized distribution channels. Confirm AEC-Q101 certification status matches project requirements. Check datasheet revisions for any recent packaging or material changes. Ensure storage conditions comply with moisture sensitivity level specifications prior to assembly.
Select this IGBT when designing automotive ignition coils requiring robust short-circuit immunity. The integrated gate resistor simplifies circuit design by eliminating external components. Verify thermal management capabilities align with the 18 A continuous current rating under expected operating temperatures.
This component belongs to the STGB18N40LZ family of automotive IGBTs. It shares the PowerMESH™ technology platform with other devices in the series, offering consistent performance characteristics for high-reliability automotive power switching applications.
Direct substitutes include STGB18N40LZ variants with identical electrical specifications. Verify pin compatibility and thermal resistance values before substitution. Ensure any replacement maintains AEC-Q101 qualification for automotive use.