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Product Detailed Parameters
- Description：IGBT 600V 35A 125W D2PAK
- Series：PowerMESH™
- Mfr：STMicroelectronics
- Package：Tape & Reel (TR)
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：35 A
- Current - Collector Pulsed (Icm)：75 A
- Vce(on) (Max) @ Vge, Ic：2.75V @ 15V, 12A
- Power - Max：125 W
- Switching Energy：165µJ (on), 255µJ (off)
- Input Type：Standard
- Gate Charge：55 nC
- Td (on/off) @ 25°C：30ns/105ns
- Test Condition：480V, 12A, 10Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Supplier Device Package：D2PAK
- Grade：-
- Qualification：-
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Overview
The STGB19NC60KT4 is a silicon N-channel IGBT from the STMicroelectronics PowerMESH™ series, rated for 600 V collector-emitter voltage and 20 A continuous collector current. It utilizes advanced trench gate technology to achieve low on-state voltage drop and optimized switching performance. The device features a short-circuit withstand time of 10 μs at 300 V and 150°C junction temperature. It is co-packaged with an ultra-fast freewheeling diode exhibiting very soft recovery characteristics. Designed for surface mount applications, it operates within a junction temperature range of -55°C to 150°C.
Feature Summary
- Advanced PowerMESH™ technology ensures excellent trade-off between switching performance and low on-state behavior.
- Low C_res / C_ies ratio eliminates susceptibility to cross-conduction.
- Co-packaged with an ultra-fast freewheeling diode featuring very soft ultra-fast recovery.
Applications
- High frequency inverters
- Motor drives
Procurement Notes
Verify the specific suffix 'T4' against official datasheets to confirm tape-and-reel packaging requirements. Ensure compatibility with RoHS3 standards if environmental compliance is mandatory. Confirm that the requested part number matches the exact electrical ratings and package type required for the design, as minor suffix variations may indicate different packaging or testing conditions.
Selection Notes
Select this component for designs requiring high-frequency operation and robust short-circuit protection. The integrated anti-parallel diode simplifies circuit topology by removing the need for external fast recovery diodes. Consider the thermal management capabilities of the TO-220FP package when calculating heat dissipation for continuous loads near the 20 A rating.
Part Context
This IGBT belongs to the STGx19NC60KD family, which includes variants like STGB19NC60KDT4 and STGP19NC60KD. These devices share the same core PowerMESH™ technology and electrical specifications but may differ in packaging options such as D²PAK or TO-220FP. The family is designed for resonant and soft-switching applications where low switching losses are critical.
Replacement Considerations
Direct substitutes within the same family include STGB19NC60KDT4 (D²PAK) and STGP19NC60KD (TO-220FP). Verify pinout compatibility and thermal resistance differences when replacing across package types. Cross-reference with other 600V 20A IGBTs only if electrical parameters and package dimensions match exactly.
