STGB20H65DFB2

$2.27

Description：IGBT TRENCH FS 650V 40A D2PAK-3
Series：HB2

SKU:01b3b909953e Category: Single IGBTs Brand: STMicroelectronics

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Product introduction

Product Detailed Parameters

Description：IGBT TRENCH FS 650V 40A D2PAK-3
Series：HB2
Mfr：STMicroelectronics
Package：Tape & Reel (TR),Cut Tape (CT)
IGBT Type：Trench Field Stop
Voltage - Collector Emitter Breakdown (Max)：650 V
Current - Collector (Ic) (Max)：40 A
Current - Collector Pulsed (Icm)：60 A
Vce(on) (Max) @ Vge, Ic：2.1V @ 15V, 20A
Power - Max：147 W
Switching Energy：265µJ (on), 214µJ (off)
Input Type：Standard
Gate Charge：56 nC
Td (on/off) @ 25°C：16ns/78.8ns
Test Condition：400V, 20A, 10Ohm, 15V
Reverse Recovery Time (trr)：215 ns
Operating Temperature：-55°C ~ 175°C (TJ)
Mounting Type：Surface Mount
Package / Case：TO-263-4, D2PAK (3 Leads + Tab), TO-263AA
Supplier Device Package：D2PAK-3
Grade：-
Qualification：-

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STGB20H65DFB2

Overview

The STGB20H65DFB2 is a trench gate field-stop IGBT from the HB2 series, rated at 650 V and packaged in a D²PAK (TO-263) type A2. It features a maximum junction temperature of 175 °C and a typical collector-emitter saturation voltage of 1.65 V at 20 A. The device includes a co-packaged very fast soft recovery diode with a forward on-voltage of 1.65 V at 20 A. Key electrical ratings include a continuous collector current of 40 A at 25 °C case temperature and a total power dissipation of 147 W at 25 °C. Thermal resistance from junction to case is 1.02 °C/W for the IGBT and 1.47 °C/W for the diode.

Feature Summary

Advanced proprietary trench gate field-stop structure optimized for conduction and reduced switching energy.
Co-packaged very fast soft recovery diode designed to maximize efficiency in fast applications.
Positive VCE(sat) temperature coefficient ensuring safer paralleling operation.
Tight parameter distribution and minimized tail current.

Applications

Welding
PFC converters - single phase input
Solar inverters (string and central)
Uninterruptable power supplies (UPS)
EV charging - DC fast charging stations

Procurement Notes

Verify the specific ordering code against the manufacturer's official datasheet to ensure correct package and packing configuration. Confirm that the component meets required environmental compliance standards such as ECOPACK specifications before finalizing procurement decisions.

Selection Notes

Select this component for high-speed applications requiring low conduction losses and efficient switching. Consider the thermal resistance values when designing heat sinks, especially given the 175 °C maximum junction temperature capability. Ensure gate drive circuits support the specified voltage levels for optimal performance.

Part Context

This part belongs to the HB2 series of IGBTs, representing an evolution of STMicroelectronics' trench gate field-stop technology. It is designed to offer improved performance over previous generations by optimizing VCE(sat) behavior at low currents and reducing switching energy losses.

Replacement Considerations

Direct substitutes within the same series include STGF20H65DFB2 (TO-220FP package) and STGWA20HP65FB2 (TO-247 long leads package). Verify pinout compatibility and thermal characteristics when considering alternative packages.