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Product Detailed Parameters
- Description：IGBT TRENCH FS 650V 40A D2PAK
- Series：M
- Mfr：STMicroelectronics
- Package：Tape & Reel (TR),Cut Tape (CT)
- IGBT Type：Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max)：650 V
- Current - Collector (Ic) (Max)：40 A
- Current - Collector Pulsed (Icm)：80 A
- Vce(on) (Max) @ Vge, Ic：2V @ 15V, 20A
- Power - Max：166 W
- Switching Energy：140µJ (on), 560µJ (off)
- Input Type：Standard
- Gate Charge：63 nC
- Td (on/off) @ 25°C：26ns/108ns
- Test Condition：400V, 20A, 12Ohm, 15V
- Reverse Recovery Time (trr)：166 ns
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Supplier Device Package：D2PAK
- Grade：-
- Qualification：-
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Overview
The STGB20M65DF2 is a trench gate field-stop IGBT from the M series, rated at 650 V and 20 A in a D2PAK package. It features a typical VCE(sat) of 1.55 V at IC = 20 A and supports a maximum junction temperature (TJ) of 175 °C. The device provides 6 µs of short-circuit withstand time and utilizes a soft, very fast recovery antiparallel diode. Its positive VCE(sat) temperature coefficient and tight parameter distribution facilitate safer paralleling operation.
Feature Summary
- Advanced proprietary trench gate field-stop structure for low-loss performance
- Positive VCE(sat) temperature coefficient enabling safer paralleling
- Soft and very fast recovery antiparallel diode
- Low thermal resistance design
Applications
- Industrial motor control
- General purpose inverters
Procurement Notes
Verify the specific ordering code against the manufacturer's current catalog to ensure availability, as product status can change. Confirm that the D2PAK package variant matches the required PCB footprint and thermal management strategy for the target application environment.
Selection Notes
Select this component when a balance between inverter system performance and efficiency is required with essential short-circuit functionality. The tight parameter distribution makes it suitable for designs requiring multiple devices to be operated in parallel without complex matching procedures.
Part Context
This device belongs to the M series IGBTs, which are designed to offer an optimal balance between inverter system performance and efficiency. The series emphasizes low-loss characteristics and robust short-circuit handling capabilities, positioning it within STMicroelectronics' portfolio for high-reliability power switching applications.
Replacement Considerations
Cross-reference with other M series IGBTs such as STGB10M65DF2 or STGP4M65DF2 for lower current requirements. Ensure any substitute maintains the same trench gate field-stop technology and D2PAK package compatibility to preserve thermal and electrical performance.
