ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：IGBT 375V 40A 150W I2PAK
- Series：PowerMESH™
- Mfr：STMicroelectronics
- Package：Tube
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：375 V
- Current - Collector (Ic) (Max)：40 A
- Current - Collector Pulsed (Icm)：80 A
- Vce(on) (Max) @ Vge, Ic：2V @ 4.5V, 20A
- Power - Max：150 W
- Switching Energy：11.8mJ (off)
- Input Type：Standard
- Gate Charge：51 nC
- Td (on/off) @ 25°C：2.3µs/11.5µs
- Test Condition：250V, 20A, 1kOhm, 4.5V
- Reverse Recovery Time (trr)：-
- Operating Temperature：175°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Supplier Device Package：D2PAK
- Grade：-
- Qualification：-
Download product information
Overview
The STGB20NB32LZ is an automotive-grade Insulated Gate Bipolar Transistor (IGBT) manufactured by STMicroelectronics. It features a 320 V collector-emitter voltage rating and utilizes advanced PowerMESH technology to achieve low on-state saturation voltage. The device is designed for coil driving applications within harsh automotive ignition systems, offering high short-circuit withstand capability (SCIS) of 300 mJ at 25 °C junction temperature. It operates within a temperature range of -55 °C to 175 °C and is supplied in a D2PAK package.
Feature Summary
- AEC-Q101 qualified for automotive reliability standards
- High short-circuit energy capability optimized for ignition coils
- Logic level gate drive with integrated ESD protection
- Gate-collector high voltage clamping for robust operation
Applications
- Automotive ignition system coil drivers
- Harsh environment power switching applications
- Automotive-grade inverter circuits
Procurement Notes
Verify the specific part number against official STMicroelectronics documentation to confirm availability and exact specifications. Ensure that the component meets the required AEC-Q101 qualification standards for your intended automotive application. Cross-reference datasheet parameters such as SCIS energy and operating temperature range before procurement.
Selection Notes
Select this IGBT when designing automotive ignition systems requiring high reliability and short-circuit robustness. Consider the 320 V voltage rating and D2PAK package constraints. Evaluate thermal management requirements given the 175 °C maximum junction temperature and the specific PowerMESH technology characteristics for low conduction losses.
Part Context
This component belongs to STMicroelectronics' automotive-grade IGBT portfolio utilizing PowerMESH technology. It is engineered specifically for demanding automotive environments, distinguishing itself through high short-circuit withstand capability and logic-level gate drive compatibility compared to standard industrial IGBTs.
