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Product Detailed Parameters
- Description：IGBT 425V 40A 200W D2PAK
- Series：PowerMESH™
- Mfr：STMicroelectronics
- Package：Tape & Reel (TR),Cut Tape (CT)
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：425 V
- Current - Collector (Ic) (Max)：40 A
- Current - Collector Pulsed (Icm)：80 A
- Vce(on) (Max) @ Vge, Ic：2V @ 4.5V, 20A
- Power - Max：200 W
- Switching Energy：11.8mJ (off)
- Input Type：Standard
- Gate Charge：51 nC
- Td (on/off) @ 25°C：2.3µs/2µs
- Test Condition：250V, 20A, 1kOhm, 4.5V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Supplier Device Package：D2PAK
- Grade：-
- Qualification：-
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Overview
The STGB20NB37LZT4 is an N-channel Insulated Gate Bipolar Transistor (IGBT) from STMicroelectronics, designed for high-efficiency power switching applications. It features a breakdown voltage of 390V and a continuous collector current of 20A at 25°C. The device utilizes PowerMESH™ technology to optimize the trade-off between conduction losses and switching speed. Key electrical parameters include a saturation voltage (VCE(sat)) typically around 1.6V at rated conditions, and it incorporates an integrated active clamping diode to protect against inductive load spikes during turn-off.
Feature Summary
- PowerMESH™ technology for optimized switching performance
- Integrated active clamping diode for robust protection
- Logic-level gate drive compatibility
- High short-circuit withstand capability
Applications
- Motor control systems
- Inverters
- Uninterruptible Power Supplies (UPS)
- Switching power supplies
Procurement Notes
Verify the specific ordering suffix 'T4' corresponds to the required tape-and-reel packaging configuration when sourcing. Confirm that the component meets AEC-Q101 automotive qualification requirements if intended for automotive-grade assemblies, as standard industrial variants may differ in reliability testing protocols.
Selection Notes
Select this component for applications requiring a balance between low conduction loss and fast switching speeds at 390V ratings. Ensure the thermal management design accounts for the device's power dissipation characteristics under maximum load conditions. Verify gate drive voltage levels are compatible with the logic-level input specifications to ensure full enhancement.
Part Context
This IGBT belongs to the NB series, which is characterized by its use of trench gate field-stop technology. This family is engineered to provide superior performance compared to older planar technologies, particularly in terms of reduced tail current and improved short-circuit ruggedness, making it suitable for modern high-frequency power conversion topologies.
Replacement Considerations
Direct replacements should be sought within the STGBxxNB37LZT4 series or equivalent 390V/20A IGBTs with similar VCE(sat) and switching energy values. Verify pinout compatibility and package dimensions (TO-263-3L) before substitution. Cross-reference short-circuit ratings and thermal impedance data to ensure equivalent system reliability.
