STGB20NC60V

$3.30

Description：IGBT 600V 60A 200W D2PAK
Series：PowerMESH™

SKU:828d73efa2b7 Category: Single IGBTs Brand: STMicroelectronics

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Product introduction

Product Detailed Parameters

Description：IGBT 600V 60A 200W D2PAK
Series：PowerMESH™
Mfr：STMicroelectronics
Package：Tape & Reel (TR),Cut Tape (CT)
IGBT Type：-
Voltage - Collector Emitter Breakdown (Max)：600 V
Current - Collector (Ic) (Max)：60 A
Current - Collector Pulsed (Icm)：100 A
Vce(on) (Max) @ Vge, Ic：2.5V @ 15V, 20A
Power - Max：200 W
Switching Energy：220µJ (on), 330µJ (off)
Input Type：Standard
Gate Charge：100 nC
Td (on/off) @ 25°C：31ns/100ns
Test Condition：390V, 20A, 3.3Ohm, 15V
Reverse Recovery Time (trr)：-
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Supplier Device Package：D2PAK
Grade：-
Qualification：-

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STGB20NC60V

Overview

The STGB20NC60V is a Trench Gate Field-Stop IGBT from the H series, rated at 600 V collector-emitter voltage. It features a continuous collector current of 20 A at 25°C and a maximum power dissipation of 200 W. The device operates within a junction temperature range of -55°C to +150°C. It utilizes advanced PowerMESH technology for optimized switching performance and low on-state behavior.

Feature Summary

High frequency operation capability up to 50 kHz
Lower CRES/CIES ratio reducing cross-conduction susceptibility
Very soft ultra-fast recovery antiparallel diode
High current capability with excellent trade-off between switching speed and low on-state voltage drop

Applications

High frequency motor controls
SMPS (Switched-Mode Power Supplies)
PFC (Power Factor Correction) in hard switch topologies
Resonant converter topologies

Procurement Notes

Verify the specific ordering suffix and package variant against the official STMicroelectronics datasheet DS4967 or equivalent product documentation. Confirm that the component matches the required thermal resistance values and absolute maximum ratings for your specific application environment. Ensure compatibility with gate drive requirements for the Trench Gate Field-Stop technology.

Selection Notes

Select this component for applications requiring high-frequency switching up to 50 kHz and robust current handling. The integrated ultra-fast recovery diode makes it suitable for resonant and hard-switched PFC circuits. Consider the TO-263 (D2PAK) package constraints for thermal management when designing the PCB layout.

Part Context

This IGBT belongs to the STMicroelectronics H series, utilizing Trench Gate Field-Stop technology. It is part of a family designed for high-efficiency power conversion, offering improved performance over standard IGBTs through reduced switching losses and enhanced thermal stability.