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Product Detailed Parameters
- Description：IGBT 600V 60A TO-263
- Series：PowerMESH™
- Mfr：STMicroelectronics
- Package：Tape & Reel (TR)
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：60 A
- Current - Collector Pulsed (Icm)：100 A
- Vce(on) (Max) @ Vge, Ic：2.5V @ 15V, 20A
- Power - Max：200 W
- Switching Energy：220µJ (on), 330µJ (off)
- Input Type：Standard
- Gate Charge：100 nC
- Td (on/off) @ 25°C：31ns/100ns
- Test Condition：390V, 20A, 3.3Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Supplier Device Package：TO-263 (D2PAK)
- Grade：-
- Qualification：-
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Overview
The STGB20NC60VT4 is an N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by STMicroelectronics. It features a maximum collector-emitter voltage (VCEO) of 600 V and a continuous collector current (Ic) of 20 A at 25°C. The device utilizes advanced PowerMESH technology to achieve low on-state saturation voltage (VCE(sat)) and high switching performance. It operates within a junction temperature range of -55°C to 150°C and includes an integrated ultra-fast recovery antiparallel diode. The component is housed in a TO-263 surface-mount package.
Feature Summary
- Advanced PowerMESH technology for optimized trade-off between low on-state voltage drop and switching performance
- Integrated very soft ultra-fast recovery antiparallel diode
- Low CRES/CIES ratio to prevent cross-conduction susceptibility
- Short-circuit withstand capability
Applications
- Resonant or soft-switching applications
- High frequency operation up to 50 kHz
- Industrial motor drives
- Switched-mode power supplies
Procurement Notes
Verify the specific ordering suffix VT4 against official STMicroelectronics documentation to confirm package type, tape-and-reel specifications, and RoHS compliance status. Ensure the requested quantity aligns with manufacturer minimum order requirements and lead times. Cross-reference the part number with authorized distributors to confirm availability and authenticity before finalizing procurement.
Selection Notes
Select this component when a 600 V rating and 20 A continuous current are required for high-frequency applications. The PowerMESH technology makes it suitable for designs prioritizing low conduction losses alongside fast switching speeds. Consider the short-circuit withstand time if protection circuitry is limited. Verify thermal management requirements given the 150°C maximum junction temperature limit.
Part Context
This IGBT belongs to the STGx20NC60 series from STMicroelectronics, designed for general-purpose industrial applications. It shares the PowerMESH platform with other variants like the STGB20NC60HDT4, differing primarily in packaging and specific electrical characteristics. The series targets efficiency improvements in power conversion systems requiring robust performance under high-frequency conditions.
Replacement Considerations
Direct replacements include STGB20NC60HDT4 and STGP20NC60V. Verify pinout compatibility and exact electrical parameters such as VCE(sat) and switching times. Ensure the alternative package matches the PCB footprint and thermal dissipation requirements of the original design.
