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The STGB30H60DF is a single IGBT from the HB series, utilizing trench gate field-stop technology. It features a 600 V collector-emitter voltage and a continuous collector current of 30 A at 25°C. The device exhibits a typical saturation voltage of 1.55 V at rated current. It supports a maximum junction temperature of 175°C and offers low thermal resistance with a soft recovery antiparallel diode.
This component belongs to the HB series of IGBTs designed for high-speed applications. It shares the trench gate field-stop architecture with models like STGB30H60DLFB but differs in packaging and specific electrical ratings. The series targets efficiency maximization through balanced conduction and switching losses.