STGB30H60DF

STGB30H60DF

$5.26
  • Description:IGBT TRENCH FS 600V 60A D2PAK
  • Series:-

SKU:f0ff71b33539 Category: Brand:

  
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Product Detailed Parameters

  • Description:IGBT TRENCH FS 600V 60A D2PAK
  • Series:-
  • Mfr:STMicroelectronics
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • IGBT Type:Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max):600 V
  • Current - Collector (Ic) (Max):60 A
  • Current - Collector Pulsed (Icm):120 A
  • Vce(on) (Max) @ Vge, Ic:2.4V @ 15V, 30A
  • Power - Max:260 W
  • Switching Energy:350µJ (on), 400µJ (off)
  • Input Type:Standard
  • Gate Charge:105 nC
  • Td (on/off) @ 25°C:50ns/160ns
  • Test Condition:400V, 30A, 10Ohm, 15V
  • Reverse Recovery Time (trr):110 ns
  • Operating Temperature:-40°C ~ 175°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package:D2PAK
  • Grade:-
  • Qualification:-

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STGB30H60DF

Overview

The STGB30H60DF is a single IGBT from the HB series, utilizing trench gate field-stop technology. It features a 600 V collector-emitter voltage and a continuous collector current of 30 A at 25°C. The device exhibits a typical saturation voltage of 1.55 V at rated current. It supports a maximum junction temperature of 175°C and offers low thermal resistance with a soft recovery antiparallel diode.

Feature Summary

  • Trench gate field-stop structure for optimized switching performance
  • Positive VCE(sat) temperature coefficient for safe paralleling
  • Ultrafast soft recovery antiparallel diode

Applications

  • High frequency converters
  • Motor drives
  • Power supplies

Part Context

This component belongs to the HB series of IGBTs designed for high-speed applications. It shares the trench gate field-stop architecture with models like STGB30H60DLFB but differs in packaging and specific electrical ratings. The series targets efficiency maximization through balanced conduction and switching losses.

STGB30H60DFSTGB30H60DF
$5.26
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