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The STGB30V60DF is a Trench gate field-stop IGBT from the V series, rated at 600 V collector-emitter voltage and 30 A continuous collector current. It utilizes an advanced proprietary trench gate field-stop structure to optimize the balance between conduction and switching losses. The device features tail-less switching off, a typical saturation voltage of 1.85 V at 30 A, and a positive temperature coefficient for safe paralleling. Packaged in D²PAK (TO-263) type A2 with tape and reel packing, it supports a maximum junction temperature of 175 °C and includes a very fast soft recovery antiparallel diode.
Verify the specific order code STGB30V60DF against the datasheet marking GB30V60DF to ensure correct identification. Confirm the package type is D²PAK and packing method is tape and reel. Check ECOPACK environmental compliance grades if required by project specifications. Ensure sourcing channels provide valid DS9531 Rev 5 documentation.
Select this component for applications requiring very high switching frequencies where low conduction and switching losses are critical. The tight parameter distribution facilitates reliable paralleling for higher current requirements. Consider the thermal resistance values and operating temperature range when designing heat dissipation solutions for the D²PAK package.
This device belongs to the ST V series IGBTs, designed specifically for very high frequency converters. It shares the same electrical ratings and core technology as the TO-247 packaged variant STGW30V60DF, differing primarily in the physical package form factor and mounting style. Both variants utilize the same trench gate field-stop architecture.
The STGW30V60DF serves as a direct functional equivalent in a TO-247 package. Designers must account for differences in thermal resistance and mechanical footprint when substituting between D²PAK and TO-247 packages despite identical electrical performance.
The typical VCE(sat) is 1.85 V when measured at IC = 30 A and VGE = 15 V.
No, the device features tail-less switching off, which helps minimize switching energy losses.
Yes, the positive VCE(sat) temperature coefficient and tight parameter distribution result in safer paralleling operation.