STGB35N35LZT4

Overview

The STGB35N35LZT4 is a single IGBT from the PowerMESH series, manufactured by STMicroelectronics. It features a collector-emitter breakdown voltage of 345 V and a continuous collector current of 40 A at 25°C. The device has a maximum power dissipation of 176 W and a saturation voltage of 1.7 V at 15 A with a 4.5 V gate drive. Gate charge is 49 nC, with turn-on and turn-off times of 1.1 µs and 26.5 µs respectively under test conditions of 300 V and 15 A. It operates within a junction temperature range of -55°C to 175°C and is housed in a TO-262 (I2PAK) through-hole package.

Feature Summary

• Utilizes PowerMESH technology for optimized performance
• Logic-level gate input capability
• High short-circuit safe operating area energy

Applications

• Automotive ignition systems
• Coil driving applications
• Harsh environment industrial circuits

Procurement Notes

Verify component authenticity against manufacturer specifications due to potential availability constraints. Confirm RoHS3 compliance status and check for specific tape-and-reel packaging requirements associated with the T4 suffix. Ensure compatibility with existing thermal management designs given the 176 W dissipation rating.

Selection Notes

Select this component when a 345 V rated IGBT with logic-level drive is required for automotive or industrial coil applications. Compare gate charge and switching times against alternative devices to ensure system efficiency targets are met. Verify that the TO-262 package fits the target PCB layout and thermal constraints.

Part Context

This part belongs to the STGB35 family of PowerMESH IGBTs designed for robust operation in demanding environments. The T4 suffix indicates a specific tape-and-reel packaging configuration intended for automated assembly processes, distinguishing it from standard tube-packaged variants.

Replacement Considerations

Public confirmed substitute: FGI3040G2-F085.