STGB4M65DF2

STGB4M65DF2

$1.38
  • Description:IGBT TRENCH FS 650V 8A D2PAK
  • Series:M

SKU:1210b694a5fe Category: Brand:

  
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Product Detailed Parameters

  • Description:IGBT TRENCH FS 650V 8A D2PAK
  • Series:M
  • Mfr:STMicroelectronics
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • IGBT Type:Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max):650 V
  • Current - Collector (Ic) (Max):8:00 AM
  • Current - Collector Pulsed (Icm):16 A
  • Vce(on) (Max) @ Vge, Ic:2.1V @ 15V, 4A
  • Power - Max:68 W
  • Switching Energy:40µJ (on), 136µJ (off)
  • Input Type:Standard
  • Gate Charge:15.2 nC
  • Td (on/off) @ 25°C:12ns/86ns
  • Test Condition:400V, 4A, 47Ohm, 15V
  • Reverse Recovery Time (trr):133 ns
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package:D2PAK
  • Grade:-
  • Qualification:-

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STGB4M65DF2

Overview

The STGB4M65DF2 is a single N-channel IGBT from the M series, utilizing trench gate field-stop technology. It features a collector-emitter voltage of 650 V and a continuous collector current of 12 A at 25°C. The typical saturation voltage is 1.7 V at 12 A. It operates within a junction temperature range of -55°C to 175°C with a maximum power dissipation of 138 W in a TO-247 package.

Feature Summary

  • Trench gate field-stop structure for low loss
  • Positive VCE(sat) temperature coefficient
  • Soft and fast-recovery antiparallel diode

Applications

  • Motor control
  • UPS systems
  • General purpose inverters

Procurement Notes

Verify the specific suffix against the manufacturer datasheet to confirm pinout and thermal characteristics. Ensure the component meets RoHS standards if required by the design specifications. Confirm availability through authorized distributors as lead times may vary based on production schedules.

Selection Notes

Select this component for applications requiring robust short-circuit withstand capability and efficient paralleling due to tight parameter distribution. The positive temperature coefficient aids in thermal stability when multiple devices are used in parallel configurations.

Part Context

This device belongs to the M series of IGBTs developed by STMicroelectronics. The series is designed to balance inverter system performance and efficiency, emphasizing low-loss operation and essential short-circuit functionality for industrial power electronics.

Replacement Considerations

Direct substitutes include other M series IGBTs with similar ratings such as STGP4M65DF2 or STGW4M65DF2. Verify that the replacement maintains the same TO-247 package and electrical characteristics for seamless integration.

STGB4M65DF2STGB4M65DF2
$1.38
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